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Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation

Sevilla, Galo A. Torres ; Rojas, Jhonathan P. ; Fahad, Hossain M. ; Hussain, Aftab M. ; Ghanem, Rawan ; Smith, Casey E. ; Hussain, Muhammad M.

Advanced materials (Weinheim), 2014-05, Vol.26 (18), p.2794-2799 [Periódico revisado por pares]

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Título:
Flexible and Transparent Silicon-on-Polymer Based Sub-20 nm Non-planar 3D FinFET for Brain-Architecture Inspired Computation
Autor: Sevilla, Galo A. Torres ; Rojas, Jhonathan P. ; Fahad, Hossain M. ; Hussain, Aftab M. ; Ghanem, Rawan ; Smith, Casey E. ; Hussain, Muhammad M.
Assuntos: Architecture ; brain-architecture inspired computation ; Computation ; FinFET ; flexible ; Industry standards ; Semiconductor devices ; silicon ; State of the art ; Three dimensional ; Transistors ; transparent ; Wafers
É parte de: Advanced materials (Weinheim), 2014-05, Vol.26 (18), p.2794-2799
Notas: Competitive Research - No. CRG-1-2012-HUS-008
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Descrição: An industry standard 8′′ silicon‐on‐insulator wafer based ultra‐thin (1 μm), ultra‐light‐weight, fully flexible and remarkably transparent state‐of‐the‐art non‐planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub‐20 nm features and the highest performance ever reported for a flexible transistor.
Editor: Germany: Blackwell Publishing Ltd
Idioma: Inglês

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