skip to main content
Idioma:
Primo Search
Clear Search Box
Search in: Busca Geral
Busca Avançada
Busca por Índices

Selective-area van der Waals epitaxy of h-BN/graphene heterostructures via He\(^{+}\) irradiation-induced defect-engineering in 2D substrates

Heilmann, Martin ; Deinhart, Victor ; Tahraoui, Abbes ; Höflich, Katja ; Lopes, J Marcelo J

arXiv.org, 2020-09

Ithaca: Cornell University Library, arXiv.org

Texto completo disponível

Citações Citado por
  • Título:
    Selective-area van der Waals epitaxy of h-BN/graphene heterostructures via He\(^{+}\) irradiation-induced defect-engineering in 2D substrates
  • Autor: Heilmann, Martin ; Deinhart, Victor ; Tahraoui, Abbes ; Höflich, Katja ; Lopes, J Marcelo J
  • Assuntos: Boron nitride ; Crystal defects ; Defects ; Density ; Electron tunneling ; Epitaxial growth ; Graphene ; Heterostructures ; Ion beams ; Nucleation ; Physics - Materials Science ; Substrates ; Two dimensional materials
  • É parte de: arXiv.org, 2020-09
  • Descrição: The combination of two-dimensional (2D) materials into heterostructures enabled the formation of atomically thin devices with designed properties. To achieve a high density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is still problematic in terms of scaling and reproducibility. However, controlling the location of the nuclei formation remains a key challenge in vdWE. Here, we use a focused He ion beam for a deterministic placement of defects in graphene substrates, which act as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). We demonstrate a mask-free, selective-area vdWE (SAvdWE), where nucleation yield and crystal quality of h-BN is controlled by the ion beam parameter used for the defect formation. Moreover, we show that h-BN grown via SAvdWE has electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.
  • Editor: Ithaca: Cornell University Library, arXiv.org
  • Idioma: Inglês
Links
Voltar para lista de resultados

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.