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The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor

Rasol, M. Faidzal ; T., Ainun ; H., Fatimah ; J., Zaharah ; S. Z. A., Mastura ; A., Rashidah ; Riyadi, Munawar A.

Journal of Nano- and Electronic Physics, 2022-04, Vol.14 (2), p.2010-2010-5 [Periódico revisado por pares]

Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics

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  • Título:
    The Effect of Channel Variation for Long Channel GaAs Junctionless Gate-All-Around Transistor
  • Autor: Rasol, M. Faidzal ; T., Ainun ; H., Fatimah ; J., Zaharah ; S. Z. A., Mastura ; A., Rashidah ; Riyadi, Munawar A.
  • Assuntos: Carrier density ; Computer architecture ; Gallium arsenide ; Nanoelectronics ; Nanomaterials ; Nanotechnology devices ; Nanowires ; Quantum mechanics ; Semiconductor devices ; Thickness ; Transistors
  • É parte de: Journal of Nano- and Electronic Physics, 2022-04, Vol.14 (2), p.2010-2010-5
  • Descrição: Since the Moore era, the use of advanced nanomaterial device architecture has been introduced to improve its electrical performance. This paper reports on the study of performance of a long channel gallium arsenide (GaAs) nanowire Junctionless Gate-All-Around (JGAA) transistor, including the quantum mechanical effect. In order to include the quantum mechanical effect, the Poisson density gradient model is used to conduct the analysis. Therefore, the channel radius (Rchn), oxide thickness (TOX) and carrier concentration (Nd) were varied to study the electrical performances of the proposed device. Through simulation, it was found that the on-current (Ion) increases significantly by 54 % with a smaller oxide thickness and channel radius. This paper also highlights the drawback of the classical model, in which it is impossible to capture the quantum effect, where the current deviations show a 12 % difference between the classical model and the quantum model. The results presented here indicate the possibility of using JGAA transistor for future nanoelectronic device application.
  • Editor: Sumy Ukraine: Sumy State University, Journal of Nano - and Electronic Physics
  • Idioma: Inglês;Russo;Ucraniano
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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