3D system integration on 300 mm wafer level: High-aspect-ratio TSVs with ruthenium seed layer by thermal ALD and subsequent copper electroplating

Killge, Sebastian ; Bartusseck, Irene ; Junige, Marcel ; Neumann, Volker ; Reif, Johanna ; Wenzel, Christian ; Böttcher, Mathias ; Albert, Matthias ; Jürgen Wolf, M. ; Bartha, Johann W.

Microelectronic engineering, 2019-01, Vol.205, p.20-25 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

Texto completo disponível