skip to main content
Idioma:
Primo Search
Clear Search Box
Search in: Busca Geral
Busca Avançada
Busca por Índices

Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations

Piotrowicz, Clémentine ; Mohamad, Blend ; Fernandes Paes Pinto Rocha, Pedro ; Malbert, N. ; Ruel, Simon ; Pimenta-Barros, Patricia ; Jaud, Marie-Anne ; Vauche, Laura ; Le Royer, Cyrille

Proceedings of the 35st International Symposium on Power Semiconductor Devices & ICsMay 28 - June 1, 2023, Hong Kong, China, 2023, p.382-385

Sem texto completo

Citações Citado por
  • Título:
    Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations
  • Autor: Piotrowicz, Clémentine ; Mohamad, Blend ; Fernandes Paes Pinto Rocha, Pedro ; Malbert, N. ; Ruel, Simon ; Pimenta-Barros, Patricia ; Jaud, Marie-Anne ; Vauche, Laura ; Le Royer, Cyrille
  • Assuntos: Electronics ; Engineering Sciences ; Micro and nanotechnologies ; Microelectronics
  • É parte de: Proceedings of the 35st International Symposium on Power Semiconductor Devices & ICsMay 28 - June 1, 2023, Hong Kong, China, 2023, p.382-385
  • Descrição: In this paper, we study the effect of the gate morphology and the impact of the crystallographic channel orientation on the on-state electrical performances of the GaN-on-Si MOS-HEMTs with a fully recessed gate. By combining physical and chemical characterizations (TEM, EDX, and AFM), experimental measurements and TCAD simulations, the effect of dry-etching and wet cleaning on the gate morphology and their consequences on electrical performances are studied. Moreover, an anisotropy behavior with the Atomic Layer Etching (ALE) and wet processes between (11$\overline{2}0$) and (1$\overline{1}00$) planes is highlighted. Using the new partitioning methodology, the contributions of the bottom and sidewall regions are evaluated separately in terms of resistance and mobility. The good agreement between TCAD simulations and experimental ID(VG ) characteristics validates the methodology and highlights the gate morphology importance for the device's on-state performances in terms of resistance, mobility, threshold voltage and subthreshold slope.
  • Idioma: Inglês
Links
Voltar para lista de resultados

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.