Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations
Piotrowicz, Clémentine ; Mohamad, Blend ; Fernandes Paes Pinto Rocha, Pedro ; Malbert, N. ; Ruel, Simon ; Pimenta-Barros, Patricia ; Jaud, Marie-Anne ; Vauche, Laura ; Le Royer, Cyrille
Proceedings of the 35st International Symposium on Power Semiconductor Devices & ICsMay 28 - June 1, 2023, Hong Kong, China, 2023, p.382-385Sem texto completo
Página Inicial
RSS
Feed
Políticas
Fale Conosco-
Realização:
Logos de Redes Sociais: 