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Disentangling the Role of the SnO Layer on the Pyro‐Phototronic Effect in ZnO‐Based Self‐Powered Photodetectors

Vieira, Eliana M. F. ; Silva, José P. B. ; Gwozdz, Katarzyna ; Kaim, Adrian ; Gomes, Nuno M. ; Chahboun, Adil ; Gomes, Maria J. M. ; Correia, José H.

Small (Weinheim an der Bergstrasse, Germany), 2023-08, Vol.19 (32), p.e2300607-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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  • Título:
    Disentangling the Role of the SnO Layer on the Pyro‐Phototronic Effect in ZnO‐Based Self‐Powered Photodetectors
  • Autor: Vieira, Eliana M. F. ; Silva, José P. B. ; Gwozdz, Katarzyna ; Kaim, Adrian ; Gomes, Nuno M. ; Chahboun, Adil ; Gomes, Maria J. M. ; Correia, José H.
  • Assuntos: Aluminum ; Electric fields ; Nanotechnology ; n‐p‐n heterojunction ; Optoelectronic devices ; Photoelectric effect ; Photometers ; Photovoltaic cells ; pyro‐phototronic effect ; self‐powered photodetectors ; Silicon substrates ; ultrafast photosensors ; Zinc oxide
  • É parte de: Small (Weinheim an der Bergstrasse, Germany), 2023-08, Vol.19 (32), p.e2300607-n/a
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: Self‐powered photodetectors (PDs) have been recognized as one of the developing trends of next‐generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self‐powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built‐in electrostatic field to highly enhance the photocurrent by over 1000%. By analyzing energy diagrams of the p‐n junction, the underlying physical mechanism of the self‐powered violet PDs is carefully illustrated. A high photo‐responsivity (R) of 93 mA W−1 accompanied by a detectivity (D*) of 3.1 × 1010 Jones are observed under self‐driven conditions, when the device is exposed to 405 nm excitation laser wavelength, with a laser power density of 36 mW cm−2 and at a chopper frequency of 400 Hz. The Si/SnO/ZnO/ITO device shows an enhancement of 3067% in responsivity when compared to the Al/Si/ZnO/ITO. The photodetector holds an ultra‐fast response of ≈ 2 µs, which is among the best self‐powered photodetectors reported in the literature based on ZnO. Self‐powered ZnO‐based photodetector with an optimum responsivity (R) and detectivity (D*)of 93 mA W−1 and 3.1 × 1010 Jones, respectively, for a laser power density of 36 mW cm−2 and a chopper frequency of 400 Hz. The SnO layer introduces a built‐in electrostatic field to highly enhance the photocurrent by over 1000%. Ultrafast rise and fall times of 2.2 and 2.0 µs, respectively, were obtained.
  • Editor: Germany: Wiley Subscription Services, Inc
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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