Idioma:

Graphene bilayer with a twist: electronic structure

Lopes Dos Santos, J M B ; Peres, N M R ; Castro Neto, A H

Physical review letters, 2007-12, Vol.99 (25), p.256802-256802, Article 256802 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por

Título:
Graphene bilayer with a twist: electronic structure
Autor: Lopes Dos Santos, J M B ; Peres, N M R ; Castro Neto, A H
É parte de: Physical review letters, 2007-12, Vol.99 (25), p.256802-256802, Article 256802
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: We consider a graphene bilayer with a relative small angle rotation between the layers--a stacking defect often seen in the surface of graphite--and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with observations in epitaxial graphene, we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single-layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap.
Editor: United States
Idioma: Inglês

Links

Voltar para lista de resultados