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1 |
Material Type: Artigo
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Temperature Dependence of Interband Transitions in Wurtzite InP NanowiresZilli, Attilio ; De Luca, Marta ; Tedeschi, Davide ; Fonseka, H. Aruni ; Miriametro, Antonio ; Tan, Hark Hoe ; Jagadish, Chennupati ; Capizzi, Mario ; Polimeni, AntonioACS nano, 2015-04, Vol.9 (4), p.4277-4287 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
2 |
Material Type: Artigo
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature LasingGao, Qian ; Saxena, Dhruv ; Wang, Fan ; Fu, Lan ; Mokkapati, Sudha ; Guo, Yanan ; Li, Li ; Wong-Leung, Jennifer ; Caroff, Philippe ; Tan, Hark Hoe ; Jagadish, ChennupatiNano letters, 2014-09, Vol.14 (9), p.5206-5211 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
3 |
Material Type: Artigo
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Thermodynamic properties of metastable wurtzite InP nanosheetsYuan, Xiaoming ; Liu, Huan ; Liu, Shuang ; Zhang, Ruizi ; Wang, Yunpeng ; He, Jun ; Tan, Hark Hoe ; Jagadish, ChennupatiJournal of physics. D, Applied physics, 2021-12, Vol.54 (50), p.505112 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
4 |
Material Type: Artigo
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A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device ApplicationsZhang, Fanlu ; Zhang, Xutao ; Li, Ziyuan ; Yi, Ruixuan ; Li, Zhe ; Wang, Naiyin ; Xu, Xiaoxue ; Azimi, Zahra ; Li, Li ; Lysevych, Mykhaylo ; Gan, Xuetao ; Lu, Yuerui ; Tan, Hark Hoe ; Jagadish, Chennupati ; Fu, LanAdvanced functional materials, 2022-01, Vol.32 (3), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
5 |
Material Type: Artigo
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Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth ParametersJoyce, Hannah J ; Wong-Leung, Jennifer ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, ChennupatiNano letters, 2010-03, Vol.10 (3), p.908-915 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
6 |
Material Type: Artigo
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Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs NanofinsSeidl, Jakob ; Gluschke, Jan G ; Yuan, Xiaoming ; Tan, H. Hoe ; Jagadish, Chennupati ; Caroff, Philippe ; Micolich, Adam PACS nano, 2021-04, Vol.15 (4), p.7226-7236 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
7 |
Material Type: Artigo
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Effect of a High Density of Stacking Faults on the Young’s Modulus of GaAs NanowiresChen, Yujie ; Burgess, Tim ; An, Xianghai ; Mai, Yiu-Wing ; Tan, H. Hoe ; Zou, Jin ; Ringer, Simon P ; Jagadish, Chennupati ; Liao, XiaozhouNano letters, 2016-03, Vol.16 (3), p.1911-1916 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
8 |
Material Type: Artigo
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Bandgap Energy of Wurtzite InAs NanowiresRota, Michele B ; Ameruddin, Amira S ; Fonseka, H. Aruni ; Gao, Qiang ; Mura, Francesco ; Polimeni, Antonio ; Miriametro, Antonio ; Tan, H. Hoe ; Jagadish, Chennupati ; Capizzi, MarioNano letters, 2016-08, Vol.16 (8), p.5197-5203 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
9 |
Material Type: Artigo
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Ultralow Surface Recombination Velocity in InP Nanowires Probed by Terahertz SpectroscopyJoyce, Hannah J ; Wong-Leung, Jennifer ; Yong, Chaw-Keong ; Docherty, Callum J ; Paiman, Suriati ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, Chennupati ; Lloyd-Hughes, James ; Herz, Laura M ; Johnston, Michael BNano letters, 2012-10, Vol.12 (10), p.5325-5330 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
10 |
Material Type: Artigo
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Wavelength-tunable InAsP quantum dots in InP nanowiresZhong, Zhiqin ; Li, Xinlei ; Wu, Jiang ; Li, Cheng ; Xie, Ruo Bing ; Yuan, Xiaoming ; Niu, Xiaobin ; Wang, Wenhao ; Luo, Xiaorong ; Zhang, Guojun ; Wang, Zhiming M. ; Tan, Hark Hoe ; Jagadish, ChennupatiApplied physics letters, 2019-07, Vol.115 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |