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Refinado por: Nome da Publicação: Ieee Transactions On Electron Devices remover assunto: Technology remover
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Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
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Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

Jimenez, David ; Miranda, Enrique ; Godoy, Andrés

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2405-2409 [Periódico revisado por pares]

New York, NY: IEEE

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2
A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects
A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects
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A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

Garcia Ruiz, F.J. ; Godoy, A. ; Gamiz, F. ; Sampedro, C. ; Donetti, L.

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3369-3377 [Periódico revisado por pares]

New York: IEEE

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3
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
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Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement

Padilla, J. L. ; Alper, C. ; Godoy, A. ; Gamiz, F. ; Ionescu, A. M.

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3560-3566 [Periódico revisado por pares]

New York: IEEE

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4
Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects
Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects
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Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

Roldan, J.B. ; Godoy, A. ; Gamiz, F. ; Balaguer, M.

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.411-416 [Periódico revisado por pares]

New York, NY: IEEE

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5
Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETs
Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETs
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Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETs

Padilla, J. L. ; Gamiz, F. ; Godoy, A.

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3205-3211 [Periódico revisado por pares]

New York, NY: IEEE

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6
Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
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Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices

Medina-Bailon, Cristina ; Padilla, Jose L. ; Sadi, Toufik ; Sampedro, Carlos ; Godoy, Andres ; Donetti, Luca ; Georgiev, Vihar P. ; Gamiz, Francisco ; Asenov, Asen

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1145-1152 [Periódico revisado por pares]

New York: IEEE

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7
Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors
Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors
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Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors

Jiménez Tejada, Juan A. ; Rodríguez, A. Luque ; Godoy, A. ; Rodríguez-Bolívar, S. ; López Villanueva, Juan A. ; Marinov, O. ; Deen, M. J.

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.459-467 [Periódico revisado por pares]

New York, NY: IEEE

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8
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- \kappa Insulators
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- \kappa Insulators
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Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- \kappa Insulators

Ruiz, F.J.G. ; Tienda-Luna, I.M. ; Godoy, A. ; Donetti, L. ; Gamiz, F.

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2711-2719 [Periódico revisado por pares]

IEEE

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9
An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
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An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

Roldán, J B ; Gamiz, F ; Jiménez-Molinos, F ; Sampedro, C ; Godoy, A ; García-Ruiz, Francisco J ; Rodriguez, N

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2925-2933 [Periódico revisado por pares]

New York, NY: IEEE

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10
Analytic Potential and Charge Model of Semiconductor Quantum Wells
Analytic Potential and Charge Model of Semiconductor Quantum Wells
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Analytic Potential and Charge Model of Semiconductor Quantum Wells

Marin, E. G. ; Tienda-Luna, I. M. ; Ruiz, F. G. ; Gonzalez-Medina, J. M. ; Godoy, A. ; Gamiz, F.

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4186-4191 [Periódico revisado por pares]

New York: IEEE

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