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1
Pressure field in a tube with a general and arbitrary time- and position-dependent gas source
Pressure field in a tube with a general and arbitrary time- and position-dependent gas source
Material Type:
Artigo 		Adicionar ao Meu Espaço

Pressure field in a tube with a general and arbitrary time- and position-dependent gas source

F T Degasperi Marcos Nogueira Martins; Jiro Takahashi; Sérgio Luís Lopes Verardi

Journal of Vacuum Science & Technology A v. 22, n. 5, p. 2022-2026, 2004

New York 2004

Acesso online

2
Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition
Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition

Masao Matsuoka 1949- Sadao Isotani; Juan Carlos Ramirez Mittani; Jose Fernando Diniz Chubaci; K Ogata; N Kuratani

Journal of Vacuum Science & Technology A v. 23, n. 1, p. 137-141, 2005

New York 2005

Acesso online

3
Pressure field in a tube with a general and arbitrary time- and position-dependent gas source
Pressure field in a tube with a general and arbitrary time- and position-dependent gas source
Material Type:
Artigo 		Adicionar ao Meu Espaço

Pressure field in a tube with a general and arbitrary time- and position-dependent gas source

F T Degasperi Marcos Nogueira Martins; Jiro Takahashi; Sérgio Luís Lopes Verardi

Journal of Vacuum Science & Technology A v. 22, n. 5, p. 2022-2026, 2004

New York 2004

Acesso online

4
Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition
Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of arrival rate and gas pressure on the chemical bonding and composition in titanium nitride films prepared on Si(100) substrates by ion beam and vapor deposition

Masao Matsuoka 1949- Sadao Isotani; Juan Carlos Ramirez Mittani; Jose Fernando Diniz Chubaci; K Ogata; N Kuratani

Journal of Vacuum Science & Technology A v. 23, n. 1, p. 137-141, 2005

New York 2005

Acesso online

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  1. Espectroscopia De Raio X  (2)
  2. Aceleração De Partículas  (2)
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Deste Autor:

  1. Ogata, K
  2. Degasperi, F
  3. Isotani, S
  4. Kuratani, N
  5. Chubaci, J

Neste Assunto:

  1. Vácuo
  2. Materiais
  3. Espectroscopia De Raio X
  4. Aceleração De Partículas

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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