Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Structural and optical characterization of AlGaN/GaN layersJayasakthi, M. ; Ramesh, R. ; Arivazhagan, P. ; Loganathan, R. ; Prabakaran, K. ; Balaji, M. ; Baskar, K.Journal of crystal growth, 2014-09, Vol.401, p.527-531 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
12 |
Material Type: Artigo
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Interplay between spin-density wave and induced local moments in URu2Si2MINEEV, V. P ; ZHITOMIRSKY, M. EPhysical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (1), p.014432.1-014432.10 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
13 |
Material Type: Artigo
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A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe SurfacesIvanits’ka, V. G. ; Moravec, P. ; Tomashik, V. M. ; Mašek, K. ; Tomashik, Z. F. ; Franc, J. ; Grill, R. ; Höschl, P.Journal of electronic materials, 2013-11, Vol.42 (11), p.3059-3065 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
14 |
Material Type: Artigo
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Reducing decoherence of the confined exciton state in a quantum dot by pulse-sequence controlAXT, V. M ; MACHNIKOWSKI, P ; KUHN, TPhysical review. B, Condensed matter and materials physics, 2005-04, Vol.71 (15), p.155305.1-155305.9, Article 155305 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
15 |
Material Type: Artigo
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Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy resultsBarettin, Daniele ; De Angelis, Roberta ; Prosposito, Paolo ; Auf der Maur, Matthias ; Casalboni, Mauro ; Pecchia, AlessandroNanotechnology, 2014-05, Vol.25 (19), p.195201-9 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
16 |
Material Type: Artigo
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Electron-phonon interaction effects in semiconductor quantum dots: A nonperturabative approachVASILEVSKIY, M. I ; ANDA, E. V ; MAKLER, S. SPhysical review. B, Condensed matter and materials physics, 2004-07, Vol.70 (3), p.035318.1-035318.14, Article 035318 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
17 |
Material Type: Artigo
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Si Doping of GaN in Hydride Vapor-Phase EpitaxyRichter, E. ; Stoica, T. ; Zeimer, U. ; Netzel, C. ; Weyers, M. ; Tränkle, G.Journal of electronic materials, 2013-05, Vol.42 (5), p.820-825 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
18 |
Material Type: Artigo
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Nucleation of superconductivity in a mesoscopic loop of varying widthMORELLE, Mathieu ; GOLUBOVIC, Dusan S ; MOSHCHALKOV, Victor VPhysical review. B, Condensed matter and materials physics, 2004-10, Vol.70 (14), p.144528.1-144528.11, Article 144528 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
19 |
Material Type: Artigo
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Influence of sample geometry on vortex matter in superconducting microstructuresMORELLE, Mathieu ; BEKAERT, Joost ; MOSHCHALKOV, Victor VPhysical review. B, Condensed matter and materials physics, 2004-09, Vol.70 (9), p.094503.1-094503.6, Article 094503 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
20 |
Material Type: Artigo
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Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystalKoh, Eui Kwan ; Park, Il-Woo ; Choi, H. ; Yoon, M. ; Ho Choh, Sung ; Sung Kim, Hang ; Min Cho, Yong ; Kim, Sangsig ; Soo Park, SungJournal of crystal growth, 2005-03, Vol.276 (1), p.37-42 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |