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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Zhao, D.G. ; Zhu, J.J. ; Jiang, D.S. ; Yang, Hui ; Liang, J.W. ; Li, X.Y. ; Gong, H.M.

Journal of crystal growth, 2006-03, Vol.289 (1), p.72-75 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
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Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

Schenk, H.P.D. ; Borenstain, S.I. ; Berezin, A. ; Schön, A. ; Cheifetz, E. ; Dadgar, A. ; Krost, A.

Journal of crystal growth, 2009-08, Vol.311 (16), p.3984-3988 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
N-type doping of HVPE-grown GaN using dichlorosilane
N-type doping of HVPE-grown GaN using dichlorosilane
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N-type doping of HVPE-grown GaN using dichlorosilane

Richter, E. ; Hennig, Ch ; Zeimer, U. ; Wang, L. ; Weyers, M. ; Tränkle, G.

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1658-1662 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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4
On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires
On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires
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On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

Neophytou, Neophytos ; Kosina, Hans

Journal of electronic materials, 2012-06, Vol.41 (6), p.1305-1311 [Periódico revisado por pares]

Boston: Springer US

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5
DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit
DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit
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DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit

Li, Yiming ; Hwang, Chih-Hong

Semiconductor science and technology, 2009-04, Vol.24 (4), p.045004-045004 (8) [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Characterization of the acid-base nature of metal oxides by adsorption of TCNQ
Characterization of the acid-base nature of metal oxides by adsorption of TCNQ
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Characterization of the acid-base nature of metal oxides by adsorption of TCNQ

Meguro, Kenjiro ; Esumi, Kunio

Journal of adhesion science and technology, 1990-01, Vol.4 (1), p.393-410 [Periódico revisado por pares]

Leiden: Taylor & Francis Group

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