Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Yttrium oxide thin films: Influence of the oxygen vacancy network organization on the microstructureJublot, M. ; Paumier, F. ; Pailloux, F. ; Lacroix, B. ; Leau, E. ; Guérin, P. ; Marteau, M. ; Jaouen, M. ; Gaboriaud, R.J. ; Imhoff, D.Thin solid films, 2007-06, Vol.515 (16), p.6385-6390 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Characterization methods of epitaxial Sr2FeMoO6 thin filmsBESSE, M ; PAILLOUX, F ; BARTHELEMY, A ; BOUZEHOUANE, K ; FERT, A ; OLIVIER, J ; DURAND, O ; WYCZISK, F ; BISARO, R ; CONTOUR, J.-PJournal of crystal growth, 2002-06, Vol.241 (4), p.448-454 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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3 |
Material Type: Artigo
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Interfacial phases in epitaxial growth of Y2O3 on MgO studied via combining electron energy-loss spectroscopy and real-space self-consistent full multiple scattering calculationsPAILLOUX, F ; JUBLOT, M ; GABORIAUD, R. J ; JAOUEN, M ; PAUMIER, F ; IMHOFF, DPhysical review. B, Condensed matter and materials physics, 2005-09, Vol.72 (12), p.125425.1-125425.10 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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Gold and silver nanoparticles embedded in dielectric-capping layers studied by HAADF-STEMBabonneau, D. ; Lantiat, D. ; Camelio, S. ; Toudert, J. ; Simonot, L. ; Pailloux, F. ; Denanot, M.-F. ; Girardeau, T.EPJ. Applied physics (Print), 2008-10, Vol.44 (1), p.3-9 [Periódico revisado por pares]Les Ulis: EDP SciencesTexto completo disponível |
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5 |
Material Type: Artigo
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Characterization of ( 1 1 1 ) surface tailored Pt nanoparticles by electrochemistry and X-ray powder diffraction : Local and near surface structure from diffractionBEYERLEIN, K. R ; SOLLA-GULLON, J ; HERRERO, E ; GARNIER, E ; PAILLOUX, F ; LEONI, M ; SCARDI, P ; SNYDER, R. L ; ALDAZ, A ; FELIU, J. MMaterials science & engineering. A, Structural materials : properties, microstructure and processing, 2010, Vol.528 (1), p.83-90 [Periódico revisado por pares]Kidlington: ElsevierTexto completo disponível |
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6 |
Material Type: Artigo
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Shallow boron implantations in Ge and the role of the pre-amorphization depthSimoen, E. ; Brouwers, G. ; Satta, A. ; David, M.-L. ; Pailloux, F. ; Parmentier, B. ; Clarysse, T. ; Goossens, J. ; Vandervorst, W. ; Meuris, M.Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.368-371 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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Twinning and lattice distortions in the epitaxy of La0.67Sr0.33MnO3 thin films on (001) SrTiO3PAILLOUX, Frédéric ; LYONNET, Rose ; MAURICE, Jean-Luc ; CONTOUR, Jean-PierreApplied surface science, 2001-06, Vol.177 (4), p.263-267 [Periódico revisado por pares]Amsterdam: Elsevier ScienceTexto completo disponível |
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8 |
Material Type: Artigo
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Microstructural investigations of Y2O3 thin films deposited by laser ablation on MgOGABORIAUD, R. J ; PAILLOUX, F ; PACAUD, J ; RENAULT, P. O ; PERRIERE, J ; HUIGNARD, AApplied physics. A, Materials science & processing, 2000-12, Vol.71 (6), p.675-680 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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9 |
Material Type: Artigo
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Epitaxial stress study by large angle convergent beam electron diffraction and high-resolution transmission electron microscopy Moiré fringe patternPailloux, F ; Gaboriaud, R.J ; Champeaux, C ; Catherinot, AMaterials science & engineering. A, Structural materials : properties, microstructure and processing, 2000-09, Vol.288 (2), p.244-247 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Atomic-scale analysis of interfaces in an all-oxide magnetic tunnel junctionMaurice, J.-L. ; Pailloux, F. ; Imhoff, D. ; Bonnet, N. ; Samet, L. ; Barthélémy, A. ; Contour, J.-P. ; Colliex, C. ; Fert, A.European physical journal. Applied physics, 2003-12, Vol.24 (3), p.215-221 [Periódico revisado por pares]Les Ulis: EDP SciencesTexto completo disponível |