Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
19.1 % efficient silicon solar cellGREEN, M. A ; BLAKERS, A. W ; JIQUN SHI ; KELLER, E. M ; WENHAM, S. RApplied physics letters, 1984-06, Vol.44 (12), p.1163-1164 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
|
2 |
Material Type: Artigo
|
19.1 percent efficient silicon solar cellGreen, M A ; Blakers, A W ; Keller, E M ; Wenham, S R ; Shi, JApplied physics letters, 1984-06, Vol.44, p.1163 [Periódico revisado por pares]Texto completo disponível |
|
3 |
Material Type: Artigo
|
RADIATION-INDUCED PEAK EFFECT IN SUPERCONDUCTING NbZrKeller, E. L. ; Coffey, H. T. ; Patterson, A. ; Autler, S. H.Applied physics letters, 1966-10, Vol.9 (7), p.270-272 [Periódico revisado por pares]Texto completo disponível |
|
4 |
Material Type: Artigo
|
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integrationYoung, N. G. ; Perl, E. E. ; Farrell, R. M. ; Iza, M. ; Keller, S. ; Bowers, J. E. ; Nakamura, S. ; DenBaars, S. P. ; Speck, J. S.Applied physics letters, 2014-04, Vol.104 (16) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
5 |
Material Type: Artigo
|
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitorsBisi, D. ; Chan, S. H. ; Liu, X. ; Yeluri, R. ; Keller, S. ; Meneghini, M. ; Meneghesso, G. ; Zanoni, E. ; Mishra, U. K.Applied physics letters, 2016-03, Vol.108 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
6 |
Material Type: Artigo
|
Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor depositionReilly, Caroline E. ; Lund, Cory ; Nakamura, Shuji ; Mishra, Umesh K. ; DenBaars, Steven P. ; Keller, StaciaApplied physics letters, 2019-06, Vol.114 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
7 |
Material Type: Artigo
|
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperatureReilly, Caroline E. ; Hatui, Nirupam ; Mates, Thomas E. ; Nakamura, Shuji ; DenBaars, Steven P. ; Keller, StaciaApplied physics letters, 2021-05, Vol.118 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
8 |
Material Type: Artigo
|
Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor depositionMuthuraj, Vineeta R. ; Reilly, Caroline E. ; Mates, Thomas ; Nakamura, Shuji ; DenBaars, Steven P. ; Keller, StaciaApplied physics letters, 2023-04, Vol.122 (14) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
9 |
Material Type: Artigo
|
Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor depositionMuthuraj, Vineeta R. ; Reilly, Caroline E. ; Mates, Thomas ; Keller, Stacia ; Nakamura, Shuji ; DenBaars, Steven P.Applied physics letters, 2022-03, Vol.120 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
|
10 |
Material Type: Artigo
|
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structuresChichibu, S. F. ; Abare, A. C. ; Minsky, M. S. ; Keller, S. ; Fleischer, S. B. ; Bowers, J. E. ; Hu, E. ; Mishra, U. K. ; Coldren, L. A. ; DenBaars, S. P. ; Sota, T.Applied physics letters, 1998-10, Vol.73 (14), p.2006-2008 [Periódico revisado por pares]Texto completo disponível |