Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTsSiddique, Anwar ; Ahmed, Raju ; Anderson, Jonathan ; Piner, Edwin L.Journal of crystal growth, 2019-07, Vol.517, p.28-34 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
12 |
Material Type: Artigo
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Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxyWu, Yao-Zheng ; Liu, Bin ; Li, Zhen-Hua ; Tao, Tao ; Xie, Zi-Li ; Xiu, Xiang-Qian ; Chen, Peng ; Chen, Dun-Jun ; Lu, Hai ; Shi, Yi ; Zhang, Rong ; Zheng, You-DouJournal of crystal growth, 2019-01, Vol.506, p.30-35 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
13 |
Material Type: Artigo
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Flat and twin-free InAs layer growth on Ge (1 1 1) substratesKajikawa, Y. ; Uematsu, Y. ; Tanabe, K.Journal of crystal growth, 2020-08, Vol.544, p.125690, Article 125690 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
14 |
Material Type: Artigo
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Kinetically limited growth of GaAsBi by molecular-beam epitaxyPtak, A.J. ; France, R. ; Beaton, D.A. ; Alberi, K. ; Simon, J. ; Mascarenhas, A. ; Jiang, C.-S.Journal of crystal growth, 2012, Vol.338 (1), p.107-110 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
15 |
Material Type: Artigo
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The effects of different types of additives on growth of biomineral phases investigated by in situ atomic force microscopyCho, Kang Rae ; Kulshreshtha, Prashant ; Wu, Kuang Jen J. ; Seto, Jong ; Qiu, S. Roger ; De Yoreo, James J.Journal of crystal growth, 2019-03, Vol.509 (C), p.8-16 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
16 |
Material Type: Artigo
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Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength rangeFinke, Tanja ; Sichkovskyi, Vitalii ; Reithmaier, Johann PeterJournal of crystal growth, 2019-07, Vol.517, p.1-6 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
17 |
Material Type: Artigo
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Epitaxial growth and characterization of Cd1−xMnxTe films on Si(1 1 1) substratesGhosh, Santunu ; Rodrigues, Leonarde N. ; Moura, Luciano G. ; Ferreira, Sukarno O.Journal of crystal growth, 2019-09, Vol.522, p.25-29 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
18 |
Material Type: Artigo
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Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxyRitzmann, Julian ; Schott, Rüdiger ; Gross, Katherine ; Reuter, Dirk ; Ludwig, Arne ; Wieck, Andreas D.Journal of crystal growth, 2018-01, Vol.481, p.7-10 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
19 |
Material Type: Artigo
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Effects of argon pressure and r.f. power on magnetron sputtered aluminum doped ZnO thin filmsEvcimen Duygulu, N. ; Kodolbas, A.O. ; Ekerim, A.Journal of crystal growth, 2014-05, Vol.394, p.116-125 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
20 |
Material Type: Artigo
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Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxySun, Yijun ; Cheng, Zhiyuan ; Sheng, Kuang ; Zhou, Qiang ; Sun, Ying ; Chen, Peng ; Zhuo, Ningze ; Wang, Haibo ; Yu, Xudong ; Heuken, Michael ; Egawa, TakashiJournal of crystal growth, 2018-10, Vol.500, p.11-14 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |