Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectorsGhose, Susmita ; Rahman, Shafiqur ; Hong, Liang ; Rojas-Ramirez, Juan Salvador ; Jin, Hanbyul ; Park, Kibog ; Klie, Robert ; Droopad, RaviJournal of applied physics, 2017-09, Vol.122 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
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Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambientYamada, Takahiro ; Ito, Joyo ; Asahara, Ryohei ; Watanabe, Kenta ; Nozaki, Mikito ; Nakazawa, Satoshi ; Anda, Yoshiharu ; Ishida, Masahiro ; Ueda, Tetsuzo ; Yoshigoe, Akitaka ; Hosoi, Takuji ; Shimura, Takayoshi ; Watanabe, HeijiJournal of applied physics, 2017-01, Vol.121 (3) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
3 |
Material Type: Artigo
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Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense rangeK. C., Anupam ; Saha, Rony ; Anderson, Jonathan ; Ayala, Anival ; Engdahl, Christopher ; Piner, Edwin L. ; Holtz, Mark W.Journal of applied physics, 2021-12, Vol.130 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Novel method for convenient Seebeck coefficient measurements on individual Si nanowiresHu, X. F. ; Li, S. J. ; Lin, D. D. ; Xiong, F. ; Jiang, Z. M. ; Yang, X. J.Journal of applied physics, 2020-11, Vol.128 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaNLee, Lok Yi ; Frentrup, Martin ; Kappers, Menno J. ; Oliver, Rachel A. ; Humphreys, Colin J. ; Wallis, David J.Journal of applied physics, 2018-09, Vol.124 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layersStolyarchuk, N. ; Markurt, T. ; Courville, A. ; March, K. ; Tottereau, O. ; Vennéguès, P. ; Albrecht, M.Journal of applied physics, 2017-10, Vol.122 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin filmsRamana, C. V. ; Rubio, E. J. ; Barraza, C. D. ; Miranda Gallardo, A. ; McPeak, Samantha ; Kotru, Sushma ; Grant, J. T.Journal of applied physics, 2014-01, Vol.115 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Fractal characterization and wettability of ion treated silicon surfacesYadav, R. P. ; Kumar, Tanuj ; Baranwal, V. ; Vandana ; Kumar, Manvendra ; Priya, P. K. ; Pandey, S. N. ; Mittal, A. K.Journal of applied physics, 2017-02, Vol.121 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Influence of fractal and multifractal morphology on the wettability and reflectivity of crystalline-Si thin film surfaces as photon absorber layers for solar cellMaity, G. ; Yadav, R. P. ; Singhal, R. ; Kulriya, P. K. ; Mishra, A. ; Som, T. ; Dhar, S. ; Kanjilal, D. ; Patel, Shiv. P.Journal of applied physics, 2021-01, Vol.129 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Thickness effect on scaling law and surface properties of nano-dimensional SnTe thin filmsMaity, G. ; Yadav, R. P. ; Singhal, R. ; Sulania, I. ; Mittal, A. K. ; Chaudhary, Dhirendra. K. ; Kanjilal, D. ; Patel, Shiv. P.Journal of applied physics, 2021-11, Vol.130 (17) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |