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Refinado por: assunto: Cntfets remover
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1
The N3XT Approach to Energy-Efficient Abundant-Data Computing
The N3XT Approach to Energy-Efficient Abundant-Data Computing
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The N3XT Approach to Energy-Efficient Abundant-Data Computing

Sabry Aly, Mohamed M. ; Philip Wong, H.-S. ; Mitra, Subhasish ; Wu, Tony F. ; Bartolo, Andrew ; Malviya, Yash H. ; Hwang, William ; Hills, Gage ; Markov, Igor ; Wootters, Mary ; Shulaker, Max M.

Proceedings of the IEEE, 2019-01, Vol.107 (1), p.19-48 [Periódico revisado por pares]

New York: IEEE

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2
Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells
Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells
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Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells

Kanhaiya, Pritpal S. ; Lau, Christian ; Hills, Gage ; Bishop, Mindy D. ; Shulaker, Max M.

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5375-5380 [Periódico revisado por pares]

New York: IEEE

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3
Energy-Efficient Abundant-Data Computing: The N3XT 1,000x
Energy-Efficient Abundant-Data Computing: The N3XT 1,000x
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Energy-Efficient Abundant-Data Computing: The N3XT 1,000x

Sabry Aly, Mohamed M. ; Mingyu Gao ; Hills, Gage ; Chi-Shuen Lee ; Pitner, Greg ; Shulaker, Max M. ; Wu, Tony F. ; Asheghi, Mehdi ; Bokor, Jeff ; Franchetti, Franz ; Goodson, Kenneth E. ; Kozyrakis, Christos ; Markov, Igor ; Olukotun, Kunle ; Pileggi, Larry ; Pop, Eric ; Rabaey, Jan ; Re, Christopher ; Wong, H.-S Philip ; Mitra, Subhasish

Computer (Long Beach, Calif.), 2015-12, Vol.48 (12), p.24-33 [Periódico revisado por pares]

New York: IEEE

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4
30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes
30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes
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30-nm Contacted Gate Pitch Back-Gate Carbon Nanotube FETs for Sub-3-nm Nodes

Srimani, Tathagata ; Hills, Gage ; Bishop, Mindy Deanna ; Shulaker, Max M.

IEEE transactions on nanotechnology, 2019, Vol.18, p.132-138 [Periódico revisado por pares]

New York: IEEE

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5
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI
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Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI

Hills, Gage ; Bardon, Marie Garcia ; Doornbos, Gerben ; Yakimets, Dmitry ; Schuddinck, Pieter ; Baert, Rogier ; Doyoung Jang ; Mattii, Luca ; Sherazi, Syed Muhammed Yasser ; Rodopoulos, Dimitrios ; Ritzenthaler, Romain ; Chi-Shuen Lee ; Thean, Aaron Voon-Yew ; Radu, Iuliana ; Spessot, Alessio ; Debacker, Peter ; Catthoor, Francky ; Raghavan, Praveen ; Shulaker, Max M. ; Wong, H.-S Philip ; Mitra, Subhasish

IEEE transactions on nanotechnology, 2018-11, Vol.17 (6), p.1259-1269 [Periódico revisado por pares]

New York: IEEE

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6
Biosensor Chip for Point-of-Care Diagnostics: Carbon Nanotube Sensing Platform for Bacterial Detection and Identification
Biosensor Chip for Point-of-Care Diagnostics: Carbon Nanotube Sensing Platform for Bacterial Detection and Identification
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Biosensor Chip for Point-of-Care Diagnostics: Carbon Nanotube Sensing Platform for Bacterial Detection and Identification

Ho, Rebecca ; Fuller, Samuel ; Lee, Hae-Seung ; Shulaker, Max M.

IEEE transactions on nanotechnology, 2024, Vol.23, p.281-285 [Periódico revisado por pares]

New York: IEEE

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7
Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process
Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process
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Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process

Yu, Andrew C. ; Srimani, Tathagata ; Lau, Christian ; Benton, Brian ; Nelson, Mark ; Shulaker, Max M.

IEEE electron device letters, 2022-03, Vol.43 (3), p.486-489 [Periódico revisado por pares]

New York: IEEE

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8
Hyperdimensional Computing Exploiting Carbon Nanotube FETs, Resistive RAM, and Their Monolithic 3D Integration
Hyperdimensional Computing Exploiting Carbon Nanotube FETs, Resistive RAM, and Their Monolithic 3D Integration
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Hyperdimensional Computing Exploiting Carbon Nanotube FETs, Resistive RAM, and Their Monolithic 3D Integration

Wu, Tony F. ; Li, Haitong ; Huang, Ping-Chen ; Rahimi, Abbas ; Hills, Gage ; Hodson, Bryce ; Hwang, William ; Rabaey, Jan M. ; Wong, H.-S. Philip ; Shulaker, Max M. ; Mitra, Subhasish

IEEE journal of solid-state circuits, 2018-11, Vol.53 (11), p.3183-3196 [Periódico revisado por pares]

New York: IEEE

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9
Negative Capacitance Carbon Nanotube FETs
Negative Capacitance Carbon Nanotube FETs
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Negative Capacitance Carbon Nanotube FETs

Srimani, Tathagata ; Hills, Gage ; Bishop, Mindy D. ; Radhakrishna, Ujwal ; Zubair, Ahmad ; Park, Rebecca S. ; Stein, Yosi ; Palacios, Tomas ; Antoniadis, Dimitri ; Shulaker, Max M.

IEEE electron device letters, 2018-02, Vol.39 (2), p.304-307 [Periódico revisado por pares]

New York: IEEE

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10
DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors
DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors
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DISC-FETs: Dual Independent Stacked Channel Field-Effect Transistors

Kanhaiya, Pritpal S. ; Hills, Gage ; Antoniadis, Dimitri A. ; Shulaker, Max M.

IEEE electron device letters, 2018-08, Vol.39 (8), p.1250-1253 [Periódico revisado por pares]

New York: IEEE

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