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Device-Physics-Based Analytical Model for Single-Event Transients in SOI CMOS Logic
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Device-Physics-Based Analytical Model for Single-Event Transients in SOI CMOS Logic

Kobayashi, D. ; Hirose, K. ; Ferlet-Cavrois, V. ; McMorrow, D. ; Makino, T. ; Ikeda, H. ; Arai, Y. ; Ohno, M.

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3043-3049 [Periódico revisado por pares]

New York: IEEE

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Development of an APD-Based PET Module and Preliminary Resolution Performance of an Experimental Prototype Gantry
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Development of an APD-Based PET Module and Preliminary Resolution Performance of an Experimental Prototype Gantry

Kataoka, J ; Matsuda, H ; Nishikido, F ; Koizumi, M ; Ikeda, H ; Yoshino, M ; Miura, T ; Tanaka, S ; Ishikawa, Y ; Kawabata, N ; Shimizu, K ; Matsunaga, Y ; Kishimoto, S ; Kubo, H ; Yanagida, Y ; Nakamori, T

IEEE transactions on nuclear science, 2010-10, Vol.57 (5), p.2448-2454 [Periódico revisado por pares]

New York: IEEE

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Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs-Methodology for Radiation Hardness Assurance
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Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs-Methodology for Radiation Hardness Assurance

Ferlet-Cavrois, V. ; Binois, C. ; Carvalho, A. ; Ikeda, N. ; Inoue, M. ; Eisener, B. ; Gamerith, S. ; Chaumont, G. ; Pintacuda, F. ; Javanainen, A. ; Schwank, J. R. ; Shaneyfelt, M. R. ; Lauenstein, J-M ; Ladbury, R. L. ; Muschitiello, M. ; Poivey, C. ; Mohammadzadeh, A.

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2920-2929 [Periódico revisado por pares]

New York: IEEE

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Some experimental studies on time-of-flight radiography using a pulsed neutron source
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Some experimental studies on time-of-flight radiography using a pulsed neutron source

Kiyanagi, Y. ; Sakamoto, N. ; Iwasa, H. ; Kamiyama, T. ; Hiraga, F. ; Sato, S. ; Sagehashi, H. ; Ino, T. ; Furusaka, M. ; Suzuki, J. ; Gorin, A. ; Manuilov, I. ; Ryazantsev, A. ; Kuroda, K. ; Sakai, K. ; Tokanai, F. ; Miyasaka, H. ; Adachi, T. ; Oku, T. ; Ikeda, K. ; Suzuki, S. ; Morimoto, K. ; Shimizu, H.M.

IEEE transactions on nuclear science, 2005-02, Vol.52 (1), p.371-374 [Periódico revisado por pares]

New York: IEEE

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