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1
Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films
Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films
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Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films

F. A. Ferri Marcelo de Assumpção Pereira da Silva; Antonio Ricardo Zanatta; A. L. S Varella; A. J. A Oliveira

Journal of Applied Physics College Park : American Institute of Physics - AIP v. 108, n. 11, p. 113922-1-113922-5, Dec. 2010

College Park 2010

Localização: IFSC - Inst. Física de São Carlos    (PROD017879 )(Acessar)

2
Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films
Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films

F. A. Ferri Marcelo de Assumpção Pereira da Silva; Antonio Ricardo Zanatta; A. L. S Varella; A. J. A Oliveira

Journal of Applied Physics College Park : American Institute of Physics - AIP v. 108, n. 11, p. 113922-1-113922-5, Dec. 2010

College Park 2010

Localização: IFSC - Inst. Física de São Carlos    (PROD017879 )(Acessar)

3
Arsenic uphill diffusion during shallow junction formation
Arsenic uphill diffusion during shallow junction formation
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Arsenic uphill diffusion during shallow junction formation

Ferri, M ; Solmi, S ; Parisini, A ; Bersani, M ; Giubertoni, D ; Barozzi, M

Journal of applied physics, 2006-06, Vol.99 (11), p.113508-113508-7 [Periódico revisado por pares]

American Institute of Physics

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4
Transient enhanced diffusion of arsenic in silicon
Transient enhanced diffusion of arsenic in silicon
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Transient enhanced diffusion of arsenic in silicon

Solmi, S. ; Ferri, M. ; Bersani, M. ; Giubertoni, D. ; Soncini, V.

Journal of applied physics, 2003-10, Vol.94 (8), p.4950-4955 [Periódico revisado por pares]

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5
Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator
Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator
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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Ferri, M ; Solmi, S ; Giubertoni, D ; Bersani, M ; Hamilton, J J ; Kah, M ; Kirkby, K ; Collart, E J. H ; Cowern, N E.B

Journal of applied physics, 2007-11, Vol.102 (10), p.103707-103707-6 [Periódico revisado por pares]

American Institute of Physics

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6
Damage and recovery in boron doped silicon on insulator layers after high energy Si + implantation
Damage and recovery in boron doped silicon on insulator layers after high energy Si + implantation
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Damage and recovery in boron doped silicon on insulator layers after high energy Si + implantation

Ferri, M ; Solmi, S ; Nobili, D ; Armigliato, A

Journal of applied physics, 2006-08, Vol.100 (3), p.033711-033711-6 [Periódico revisado por pares]

American Institute of Physics

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7
Damage and recovery in arsenic doped silicon after high energy Si+ implantation
Damage and recovery in arsenic doped silicon after high energy Si+ implantation
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Damage and recovery in arsenic doped silicon after high energy Si+ implantation

Solmi, S. ; Ferri, M. ; Nobili, D. ; Bianconi, M.

Journal of applied physics, 2004-10, Vol.96 (7), p.3769-3774 [Periódico revisado por pares]

United States

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8
Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation
Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation
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Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation

Nobili, D. ; Solmi, S. ; Ferri, M. ; Attari, M.

Journal of applied physics, 2004-06, Vol.95 (11), p.6092-6097 [Periódico revisado por pares]

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9
Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions
Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions
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Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions

Lulli, G. ; Albertazzi, E. ; Bianconi, M. ; Ferri, M.

Journal of applied physics, 2003-11, Vol.94 (9), p.6215-6217 [Periódico revisado por pares]

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10
Surface spin disorder effects in magnetite and poly(thiophene)-coated magnetite nanoparticles
Surface spin disorder effects in magnetite and poly(thiophene)-coated magnetite nanoparticles
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Surface spin disorder effects in magnetite and poly(thiophene)-coated magnetite nanoparticles

Cótica, Luiz F ; Santos, Ivair A ; Girotto, Emerson M ; Ferri, Elidia V ; Coelho, Adelino A

Journal of applied physics, 2010-09, Vol.108 (6), p.064325-064325-6 [Periódico revisado por pares]

American Institute of Physics

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Deste Autor:

  1. Silva, M
  2. Oliveira, A
  3. Ferri, F
  4. Varella, A
  5. Zanatta, A

Neste Assunto:

  1. Physics
  2. Physics, Applied
  3. Physical Sciences
  4. Science & Technology
  5. General Physics And Astronomy

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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