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Spatial characterization of doped SiC wafers by Raman spectroscopy
Spatial characterization of doped SiC wafers by Raman spectroscopy
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Spatial characterization of doped SiC wafers by Raman spectroscopy

Burton, J. C. ; Sun, L. ; Pophristic, M. ; Lukacs, S. J. ; Long, F. H. ; Feng, Z. C. ; Ferguson, I. T.

Journal of applied physics, 1998-12, Vol.84 (11), p.6268-6273 [Periódico revisado por pares]

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2
Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes
Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes
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Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes

Pophristic, M. ; Long, F. H. ; Tran, C. ; Ferguson, I. T. ; Karlicek, R. F.

Journal of applied physics, 1999-07, Vol.86 (2), p.1114-1118 [Periódico revisado por pares]

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3
Sensitivity analysis of write field with respect to design parameters for perpendicular recording heads
Sensitivity analysis of write field with respect to design parameters for perpendicular recording heads
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Sensitivity analysis of write field with respect to design parameters for perpendicular recording heads

Liu, Z. J. ; Li, J. T. ; Long, H. H.

Journal of applied physics, 2005-05, Vol.97 (10) [Periódico revisado por pares]

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4
Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide
Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide
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Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

Burton, J. C. ; Long, F. H. ; Ferguson, I. T.

Journal of applied physics, 1999-08, Vol.86 (4), p.2073-2077 [Periódico revisado por pares]

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5
Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures
Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures
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Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures

Long, H. ; Yu, T. J. ; Liu, L. ; Yang, Z. J. ; Fang, H. ; Zhang, G. Y.

Journal of applied physics, 2012-03, Vol.111 (5), p.053110-053110-4 [Periódico revisado por pares]

American Institute of Physics

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6
Sensitivity analysis of write field with respect to design parametersfor perpendicular recording heads
Sensitivity analysis of write field with respect to design parametersfor perpendicular recording heads
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Sensitivity analysis of write field with respect to design parametersfor perpendicular recording heads

Liu, Z. J. ; Li, J. T. ; Long, H. H.

Journal of applied physics, 2005-05, Vol.97 (10), p.10N515-10N515-3 [Periódico revisado por pares]

American Institute of Physics

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7
A fast Fourier transform on multipole algorithm for micromagnetic modeling of perpendicular recording media
A fast Fourier transform on multipole algorithm for micromagnetic modeling of perpendicular recording media
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A fast Fourier transform on multipole algorithm for micromagnetic modeling of perpendicular recording media

Liu, Z. J. ; Long, H. H. ; Ong, E. T. ; Li, E. P.

Journal of applied physics, 2006-04, Vol.99 (8), p.08B903-08B903-3 [Periódico revisado por pares]

American Institute of Physics

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8
Infrared to visible upconversion in Er3+-doped-lead-germanate glass: Effects of Er3+ ion concentration
Infrared to visible upconversion in Er3+-doped-lead-germanate glass: Effects of Er3+ ion concentration
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Infrared to visible upconversion in Er3+-doped-lead-germanate glass: Effects of Er3+ ion concentration

Pan, Z. ; Morgan, S. H. ; Loper, A. ; King, V. ; Long, B. H. ; Collins, W. E.

Journal of applied physics, 1995-05, Vol.77 (9), p.4688-4692 [Periódico revisado por pares]

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9
Discharge stability in E-beam-sustained rare-gas halide lasers
Discharge stability in E-beam-sustained rare-gas halide lasers
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Discharge stability in E-beam-sustained rare-gas halide lasers

Long, W. H.

Journal of applied physics, 1979-01, Vol.50 (1), p.168-172 [Periódico revisado por pares]

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10
Onset of thermal convection in an anisotropic and inhomogeneous porous layer underlying a fluid layer
Onset of thermal convection in an anisotropic and inhomogeneous porous layer underlying a fluid layer
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Onset of thermal convection in an anisotropic and inhomogeneous porous layer underlying a fluid layer

CHEN, F ; HSU, L. H

Journal of applied physics, 1991-05, Vol.69 (9), p.6289-6301 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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