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Microelectronics And Reliability
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Microelectronics And Reliability
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Diagnostic-driven yield engineering under atypical wafer foundry conditionsNgow, Y.T. ; Goh, S.H.Microelectronics and reliability, 2021-04, Vol.119, p.114076, Article 114076 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 2 |
Material Type: Artigo
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Engineering application research on reliability prediction of the combined DC-DC power supplyHe, Yuchen ; Zhang, Haiming ; Wang, Pingzhou ; Huang, Yunzhi ; Chen, Zhiwei ; Zhang, YingyingMicroelectronics and reliability, 2021-03, Vol.118, p.114059, Article 114059 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 3 |
Material Type: Artigo
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The improvement of HEIP immunity using STI engineering at DRAMHan, Seunguk ; Lee, Youngyoun ; Kim, Yongdoo ; Park, Jemin ; Lim, Junhee ; Yamada, Satoru ; Hong, Hyeongsun ; Lee, Kyupil ; Jin, Gyoyoung ; Jung, EunseungMicroelectronics and reliability, 2017-09, Vol.76-77, p.164-167 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 4 |
Material Type: Artigo
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Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emissionBeyreuther, A. ; Vogt, I. ; Herfurth, N. ; Nakamura, T. ; Fischer, G.G. ; Motamedi, B. ; Boit, C.Microelectronics and reliability, 2019-01, Vol.92, p.143-148 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 5 |
Material Type: Artigo
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Source engineering on ruggedness and RF performance of n-channel RFLDMOSLi, Hao ; Cong, Mifang ; Li, Ke ; Du, HuanMicroelectronics and reliability, 2018-08, Vol.87, p.57-63 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 6 |
Material Type: Artigo
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Realistic non-destructive testing of integrated circuit bond wiring using 3-D X-ray tomography, reverse engineering, and finite element analysisFavata, Joseph ; Shahbazmohamadi, SinaMicroelectronics and reliability, 2018-04, Vol.83, p.91-100 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 7 |
Material Type: Artigo
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Metallized polymer film capacitors ageing law based on capacitance degradationMakdessi, M. ; Sari, A. ; Venet, P.Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1823-1827 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
| 8 |
Material Type: Artigo
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Improved performance of nanoscale junctionless transistor based on gate engineering approachWang, Ying ; Shan, Chan ; Dou, Zheng ; Wang, Li-guo ; Cao, FeiMicroelectronics and reliability, 2015-02, Vol.55 (2), p.318-325 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 9 |
Material Type: Artigo
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Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodesButtay, Cyril ; Wong, Hiu-Yung ; Wang, Boyan ; Xiao, Ming ; Dimarino, Christina ; Zhang, YuhaoMicroelectronics and reliability, 2020-11, Vol.114, p.113743, Article 113743 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
| 10 |
Material Type: Artigo
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A review of lead-free solders for electronics applicationsCheng, Shunfeng ; Huang, Chien-Ming ; Pecht, MichaelMicroelectronics and reliability, 2017-08, Vol.75, p.77-95 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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