Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Magnetic Characteristic of Mn + Ion Implanted GaN EpilayerHae Kwon, Yoon Shon ; Young Kim, Deuk ; Won Kang, Xiangjun FanJapanese Journal of Applied Physics, 2001, Vol.40 (9R), p.5304-5305 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Size and Interface State Dependence of the Luminescence Properties in Si NanocrystalsAhn, Chang-Geun ; Jang, Tae-Su ; Kim, Kwang-Hee ; Kwon, Young-Kyu ; Kang, BongkooJapanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.2382-2386 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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An Evaluation Process of Polymeric Adhesive Wafer Bonding for Vertical System IntegrationKwon, Yongchai ; Seok, JongwonJapanese Journal of Applied Physics, 2005-06, Vol.44 (6R), p.3893 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Performance of New Self-Aligned InP/InGaAs Heterojunction Bipolar Transistors Using Crystallographically Defined Emitter Contact TechnologyKim, Moonjung ; Kim, Taeho ; Jeon, Sookun ; Yoon, Myounghoon ; Kwon, Young-Se ; Yang, KyounghoonJapanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 2B), p.1139-1142 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Photo-enhanced Magnetoresistance Effect in GaAs with Nanoscale Magnetic ClustersShon, Yoon ; Yuldashev, Shavkat U. ; Fan, Xiangjun ; Fu, Dejun ; Kwon, Young Hae ; Hong, Chi Yhou ; Kang, Tae WonJapanese Journal of Applied Physics, 2001, Vol.40 (5R), p.3082-3084 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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An InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring CavityJeon, Soo-Kun ; Kim, Bun-Joong ; Kim, Moon-Jung ; Cha, Jung-Ho ; Kim, Jae-Ho ; Kwon, Young-SeJapanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4B), p.2556-2558 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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Noise parameter extraction of a GaAs MESFET with Monte-Carlo simulationBAEK, J ; KWON, Y ; HONG, SJapanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1862-1865 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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8 |
Material Type: Artigo
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Theoretical comparison of (111) and (100) GaAs/AlGaAs p-type quantum well infrared photodetectorsCHO, T ; KIM, H ; KWON, Y ; HONG, SJapanese Journal of Applied Physics, 1996, Vol.35 (4A), p.2164-2167 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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9 |
Material Type: Artigo
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New fabrication technology for integrating field effect transistors and diodesJUNG, J.-W ; HONG, S.-C ; KWON, Y.-SJapanese Journal of Applied Physics, 1996-02, Vol.35 (2B), p.1194-1197 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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10 |
Material Type: Artigo
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Low temperature (≤550°C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium filmsLEE, S.-K ; CHOE, S.-M ; AHN, C.-G ; CHUNG, W.-J ; KWON, Y.-K ; KANG, B.-K ; KIM, OJapanese Journal of Applied Physics, 1997, Vol.36 (3B), p.1389-1393 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |