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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover Nome da Publicação: Japanese Journal Of Applied Physics. Pt. 2, Letters remover
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1
A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode
A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode
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A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode

Hideharu Matsuura, Hideharu Matsuura ; Kenji Akatani, Kenji Akatani ; Michihisa Ueda, Michihisa Ueda ; Kazushige Segawa, Kazushige Segawa ; Hidemasa Tomozawa, Hidemasa Tomozawa ; Katsuhiko Nishida, Katsuhiko Nishida ; Kazuo Taniguchi, Kazuo Taniguchi

Japanese Journal of Applied Physics, 1999-09, Vol.38 (9A), p.L1015 [Periódico revisado por pares]

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2
In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al 2 O 3 ) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al 2 O 3 ) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
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In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al 2 O 3 ) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition

Zhang, Bao-ping ; Manh, Le-hong ; Wakatsuki, Katsuki ; Tamura, Kentaro ; Ohnishi, Tsuyoshi ; Lippmaa, Mikk ; Usami, Noritaka ; Kawasaki, Masashi ; Koinuma, Hideomi ; Segawa, Yusaburo

Japanese Journal of Applied Physics, 2003-03, Vol.42 (Part 2, No. 3B), p.L264-L266 [Periódico revisado por pares]

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3
All-solid-state, THz radiation source using a saturable Bragg reflector in a femtosecond mode-locked laser
All-solid-state, THz radiation source using a saturable Bragg reflector in a femtosecond mode-locked laser
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All-solid-state, THz radiation source using a saturable Bragg reflector in a femtosecond mode-locked laser

SARUKURA, N ; LIU, Z ; OHTAKE, H ; IZUMIDA, S ; YAMANAKA, T ; SEGAWA, Y ; ITATANI, T ; SUGAYA, T ; NAKAGAWA, T ; SUGIYAMA, Y

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5A), p.L560-L562 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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4
Self formation and optical properties of II-VI semiconductor wire structures
Self formation and optical properties of II-VI semiconductor wire structures
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Self formation and optical properties of II-VI semiconductor wire structures

ZHANG, B ; WANG, W ; YASUDA, T ; LI, Y ; SEGAWA, Y ; YAGUCHI, I ; ONABE, K ; EDAMATSU, K ; ITOH, T

Japanese Journal of Applied Physics, 1997-11, Vol.36 (11B), p.L1490-L1493 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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