Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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1-kV vertical Ga2O3 field-plated Schottky barrier diodesKonishi, Keita ; Goto, Ken ; Murakami, Hisashi ; Kumagai, Yoshinao ; Kuramata, Akito ; Yamakoshi, Shigenobu ; Higashiwaki, MasatakaApplied physics letters, 2017-03, Vol.110 (10) [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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On-demand generation of background-free single photons from a solid-state sourceSchweickert, Lucas ; Jöns, Klaus D. ; Zeuner, Katharina D. ; Covre da Silva, Saimon Filipe ; Huang, Huiying ; Lettner, Thomas ; Reindl, Marcus ; Zichi, Julien ; Trotta, Rinaldo ; Rastelli, Armando ; Zwiller, ValApplied physics letters, 2018-02, Vol.112 (9) [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Enhanced piezoelectric effect in Janus group-III chalcogenide monolayersGuo, Yu ; Zhou, Si ; Bai, Yizhen ; Zhao, JijunApplied physics letters, 2017-04, Vol.110 (16) [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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The efficiency limit of CH3NH3PbI3 perovskite solar cellsSha, Wei E. I. ; Ren, Xingang ; Chen, Luzhou ; Choy, Wallace C. H.Applied physics letters, 2015-06, Vol.106 (22) [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistorsGong, Cheng ; Zhang, Hengji ; Wang, Weihua ; Colombo, Luigi ; Wallace, Robert M. ; Cho, KyeongjaeApplied physics letters, 2013-07, Vol.103 (5) [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitrideMackoit-Sinkevičienė, M. ; Maciaszek, M. ; Van de Walle, C. G. ; Alkauskas, A.Applied physics letters, 2019-11, Vol.115 (21) [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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Active materials by four-dimension printingGe, Qi ; Qi, H. Jerry ; Dunn, Martin L.Applied physics letters, 2013-09, Vol.103 (13), p.131901 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Substrate-induced strain and charge doping in CVD-grown monolayer MoS2Chae, Woo Hyun ; Cain, Jeffrey D. ; Hanson, Eve D. ; Murthy, Akshay A. ; Dravid, Vinayak P.Applied physics letters, 2017-10, Vol.111 (14) [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructureCadiz, F. ; Robert, C. ; Courtade, E. ; Manca, M. ; Martinelli, L. ; Taniguchi, T. ; Watanabe, K. ; Amand, T. ; Rowe, A. C. H. ; Paget, D. ; Urbaszek, B. ; Marie, X.Applied physics letters, 2018-04, Vol.112 (15) [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristicsHigashiwaki, Masataka ; Sasaki, Kohei ; Kamimura, Takafumi ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2013-09, Vol.103 (12) [Periódico revisado por pares]Texto completo disponível |