Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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New numerical low frequency noise model for front and buried oxide trap density characterization in FDSOI MOSFETsEl Husseini, J. ; Martinez, F. ; Armand, J. ; Bawedin, M. ; Valenza, M. ; Ritzenthaler, R. ; Lime, F. ; Iñiguez, B. ; Faynot, O. ; Le Royer, C.Microelectronic engineering, 2011-07, Vol.88 (7), p.1286-1290 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETsArmand, J. ; Martinez, F. ; Valenza, M. ; Rochereau, K. ; Vincent, E.Microelectronic engineering, 2007-09, Vol.84 (9), p.2382-2385 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
3 |
Material Type: Artigo
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dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technologyArmand, J. ; Martinez, Frédéric ; Benoit, P. ; Valenza, M. ; Vincent, E. ; Huard, V. ; Rochereau, K.Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009-05, Vol.27 (3)American Vacuum Society (AVS)Texto completo disponível |
4 |
Material Type: Ata de Congresso
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Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradationArmand, J. ; Martinez, F. ; Gyani, J. ; Benoit, P. ; Valenza, M. ; Vincent, E. ; Huard, V. ; Guerin, C. ; Rochereau, K.2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.155-158IEEETexto completo disponível |
5 |
Material Type: Artigo
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Lasing in strained germanium microbridgesArmand Pilon, F T ; Lyasota, A ; Niquet, Y-M ; Reboud, V ; Calvo, V ; Pauc, N ; Widiez, J ; Bonzon, C ; Hartmann, J M ; Chelnokov, A ; Faist, J ; Sigg, HNature communications, 2019-06, Vol.10 (1), p.2724-8, Article 2724 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
6 |
Material Type: Artigo
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Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 KReboud, V. ; Gassenq, A. ; Pauc, N. ; Aubin, J. ; Milord, L. ; Thai, Q. M. ; Bertrand, M. ; Guilloy, K. ; Rouchon, D. ; Rothman, J. ; Zabel, T. ; Armand Pilon, F. ; Sigg, H. ; Chelnokov, A. ; Hartmann, J. M. ; Calvo, V.Applied physics letters, 2017-08, Vol.111 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Investigation of lasing in highly strained germanium at the crossover to direct band gapArmand Pilon, F. T. ; Niquet, Y-M. ; Chretien, J. ; Pauc, N. ; Reboud, V. ; Calvo, V. ; Widiez, J. ; Hartmann, J. M. ; Chelnokov, A. ; Faist, J. ; Sigg, H.Physical review research, 2022-07, Vol.4 (3), p.033050, Article 033050 [Periódico revisado por pares]American Physical SocietyTexto completo disponível |
8 |
Material Type: Artigo
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Mid-infrared supercontinuum generation in a low-loss germanium-on-silicon waveguideDella Torre, Alberto ; Sinobad, Milan ; Armand, Remi ; Luther-Davies, Barry ; Ma, Pan ; Madden, Stephen ; Mitchell, Arnan ; Moss, David J. ; Hartmann, Jean-Michel ; Reboud, Vincent ; Fedeli, Jean-Marc ; Monat, Christelle ; Grillet, ChristianAPL photonics, 2021-01, Vol.6 (1), p.016102-016102-7 [Periódico revisado por pares]AIP Publishing LLCTexto completo disponível |
9 |
Material Type: Artigo
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Acoustic response of a rigid-frame porous medium plate with a periodic set of inclusionsGroby, J.-P. ; Wirgin, A. ; De Ryck, L. ; Lauriks, W. ; Gilbert, R. P. ; Xu, Y. S.The Journal of the Acoustical Society of America, 2009-08, Vol.126 (2), p.685-693 [Periódico revisado por pares]Melville, NY: Acoustical Society of AmericaTexto completo disponível |
10 |
Material Type: Artigo
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TEM study of structural hardening in a new martensitic steel for aeronautic applicationPettinari-Sturmel, F. ; Kedjar, B. ; Douin, J. ; Gatel, C. ; Delagnes, D. ; Coujou, A.Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2013-08, Vol.576, p.290-297 [Periódico revisado por pares]Kidlington: Elsevier B.VTexto completo disponível |