Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A Temperature-Stabilized Single-Channel 1-GS/s 60-dB SNDR SAR-Assisted Pipelined ADC With Dynamic Gm-R-Based AmplifierJiang, Wenning ; Zhu, Yan ; Zhang, Minglei ; Chan, Chi-Hang ; Martins, Rui PauloIEEE journal of solid-state circuits, 2020-02, Vol.55 (2), p.322-332 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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A Single-Channel 12-b 2-GS/s PVT-Robust Pipelined ADC With Sturdy Ring Amplifier and Time-Domain QuantizerCao, Yuefeng ; Zhang, Minglei ; Zhu, Yan ; Martins, Rui P. ; Chan, Chi-HangIEEE journal of solid-state circuits, 2024-06, p.1-13 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic ResonancesLim, Chee Cheow ; Ramiah, Harikrishnan ; Yin, Jun ; Mak, Pui-In ; Martins, Rui P.IEEE journal of solid-state circuits, 2018-12, Vol.53 (12), p.3528-3539 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Memory design using a one-transistor gain cell on SOIOhsawa, T. ; Fujita, K. ; Higashi, T. ; Iwata, Y. ; Kajiyama, T. ; Asao, Y. ; Sunouchi, K.IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1510-1522 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOSLi, J.C. ; Elliott, K.R. ; Matthews, D.S. ; Hitko, D.A. ; Zehnder, D. ; Royter, Y. ; Patterson, P.R. ; Hussain, T. ; Jensen, J.F.IEEE journal of solid-state circuits, 2009-10, Vol.44 (10), p.2663-2670 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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A 50-W low distortion GaAs MESFET for digital cellular base stationsOno, F. ; Singu, Z. ; Asano, K. ; Morikawa, J. ; Kuzuhara, M. ; Emori, F.IEEE journal of solid-state circuits, 1997-09, Vol.32 (9), p.1402-1404 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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A new MOSFET-C universal filter structure for VLSIIsmail, M. ; Smith, S.V. ; Beale, R.G.IEEE journal of solid-state circuits, 1988-02, Vol.23 (1), p.183-194 [Periódico revisado por pares]IEEETexto completo disponível |
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8 |
Material Type: Artigo
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100-GHz high-gain InP MMIC cascode amplifierMajidi-Ahy, R. ; Nishimoto, C. ; Riaziat, M. ; Glenn, M. ; Silverman, S. ; Weng, S.-L. ; Pao, Y.-C. ; Zdasiuk, G. ; Bandy, S. ; Tan, Z.IEEE journal of solid-state circuits, 1991-10, Vol.26 (10), p.1370-1378 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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An analysis of bootstrapped gain enhancement techniquesAbidi, A.A.IEEE journal of solid-state circuits, 1987-12, Vol.22 (6), p.1200-1204 [Periódico revisado por pares]IEEETexto completo disponível |
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10 |
Material Type: Artigo
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An adaptive line equalizer LSI for ISDN subscriber loopsInami, D. ; Kuraishi, Y. ; Fushimi, S. ; Takahashi, Y. ; Nukada, Y. ; Kameyama, S. ; Shiratori, A.IEEE journal of solid-state circuits, 1988-06, Vol.23 (3), p.657-663 [Periódico revisado por pares]IEEETexto completo disponível |