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Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects: Poster presented at ECSCRM 2018, 12th European Conference on Silicon Carbide & Related Materials, September 2-6, 2018, Birmingham, UK
Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects: Poster presented at ECSCRM 2018, 12th European Conference on Silicon Carbide & Related Materials, September 2-6, 2018, Birmingham, UK
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Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects: Poster presented at ECSCRM 2018, 12th European Conference on Silicon Carbide & Related Materials, September 2-6, 2018, Birmingham, UK

Xu, Zongwei ; Song, Y ; Rommel, Mathias ; Liu, T ; Kocher, Matthias ; He, Z.D ; Wang, H ; Yao, B.T ; Liu, L ; Fang, F.Z

2018

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