Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on SiliconSharma, Y. K. ; Li, F. ; Jennings, M. R. ; Fisher, C. A. ; Pérez-Tomás, A. ; Thomas, S. ; Hamilton, D. P. ; Russell, S. A. O. ; Mawby, P. A.Journal of electronic materials, 2015-11, Vol.44 (11), p.4167-4174 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
2 |
Material Type: Artigo
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Interfacial Microstructure Evolution and Shear Behavior of Au-Sn/Ni-xCu Joints at 350°CPeng, J. ; Wang, R. C. ; Wang, M. ; Liu, H. S.Journal of electronic materials, 2017-04, Vol.46 (4), p.2021-2029 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
3 |
Material Type: Artigo
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An Investigation of Facile One-Pot Synthesis of Li2FeSiO4/C Composite for Li Ion BatteriesThirumoolam, Mani Chandran ; Manikandan, Ananda Kumar ; Sivaramakrishnan, Balaji ; Kaluvan, Hariharan ; Gowravaram, Mohan RaoJournal of electronic materials, 2018-03, Vol.47 (3), p.1952-1961 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
4 |
Material Type: Artigo
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Vapor-Assisted Surface Activation Method for Homo- and Heterogeneous Bonding of Cu, SiO2, and Polyimide at 150°C and Atmospheric PressureShigetou, Akitsu ; Suga, TadatomoJournal of electronic materials, 2012-08, Vol.41 (8), p.2274-2280 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
5 |
Material Type: Artigo
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Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face SapphireChiba, Hiroshi ; Mori, Tatsuya ; Kawashima, Tomoyuki ; Washio, KatsuyoshiJournal of electronic materials, 2015-05, Vol.44 (5), p.1351-1356 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
6 |
Material Type: Artigo
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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°CNipoti, R. ; Nath, A. ; Qadri, S.B. ; Tian, Y-L. ; Albonetti, C. ; Carnera, A. ; Rao, Mulpuri V.Journal of electronic materials, 2012-03, Vol.41 (3), p.457-465 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
7 |
Material Type: Artigo
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Laser Fired Local Back Contact C-Si Solar Cells Using Phosphoric Acid for Back Surface FieldBalaji, Nagarajan ; Park, Cheolmin ; Ju, Minkyu ; Lee, Seunghwan ; Kim, Jungmo ; Chung, Sungyoun ; Raja, Jayapal ; Yi, JunsinJournal of electronic materials, 2015-04, Vol.44 (4), p.1181-1186 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
8 |
Material Type: Artigo
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Formation of a Buffer Layer for Graphene on C-Face SiC{0001}He, Guowei ; Srivastava, N. ; Feenstra, R. M.Journal of electronic materials, 2014-04, Vol.43 (4), p.819-827 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
9 |
Material Type: Artigo
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Experimental Determination and Thermodynamic Modeling of the Sn-Rich Corner of the Ternary Ni-Pd-Sn Phase Diagram at 250°CRahman, Md. Arifur ; Ho, Cheng En ; Gierlotka, Wojciech ; Kuo, Jui ChaoJournal of electronic materials, 2014-12, Vol.43 (12), p.4582-4593 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
10 |
Material Type: Artigo
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Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted SiRudawski, N.G. ; Whidden, L.R. ; Craciun, V. ; Jones, K.S.Journal of electronic materials, 2009-09, Vol.38 (9), p.1926-1930 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |