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Refinado por: Base de dados/Biblioteca: ANTE: Abstracts in New Technology & Engineering remover assunto: Engineering, Electrical & Electronic remover assunto: Semiconductor Lasers; Laser Diodes remover Optics remover Exact Sciences And Technology remover
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1
Monolithically integrated wavelength-multiplexed DFB laser array with laterally coupled quarter-wave phase-shift gratings defined by interference lithography
Monolithically integrated wavelength-multiplexed DFB laser array with laterally coupled quarter-wave phase-shift gratings defined by interference lithography
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Monolithically integrated wavelength-multiplexed DFB laser array with laterally coupled quarter-wave phase-shift gratings defined by interference lithography

Li, Jingsi ; Cheng, Julian

Electronics letters, 2014-08, Vol.50 (18), p.1303-1305 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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2
Monolithic InP-based coherent transmitter photonic integrated circuit with 2.25 Tbit/s capacity
Monolithic InP-based coherent transmitter photonic integrated circuit with 2.25 Tbit/s capacity
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Monolithic InP-based coherent transmitter photonic integrated circuit with 2.25 Tbit/s capacity

Summers, J ; Vallaitis, T ; Evans, P ; Ziari, M ; Studenkov, P ; Fisher, M ; Sena, J ; James, A ; Corzine, S ; Pavinski, D ; Ou-Yang, J ; Missey, M ; Gold, D ; Williams, W ; Lai, M ; Welch, D ; Kish, F

Electronics letters, 2014-07, Vol.50 (16), p.1150-1152 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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3
Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm
Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm
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Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm

O'Carroll, J ; Byrne, D ; Kelly, B ; Phelan, R ; Gunning, F.C.G ; Anandarajah, P.M ; Barry, L.P

Electronics letters, 2014-06, Vol.50 (13), p.948-950 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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4
Cascaded Brillouin fibre lasers coupled to unitravelling carrier photodiodes for narrow linewidth terahertz generation
Cascaded Brillouin fibre lasers coupled to unitravelling carrier photodiodes for narrow linewidth terahertz generation
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Cascaded Brillouin fibre lasers coupled to unitravelling carrier photodiodes for narrow linewidth terahertz generation

Ducournau, G ; Bacquet, D ; Szriftgiser, P ; Pavanello, F ; Peytavit, E ; Zaknoune, M ; Beck, A ; Lampin, J.-F

Electronics letters, 2014-04, Vol.50 (9), p.690-692 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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5
Terahertz quantum cascade lasers with >1 W output powers
Terahertz quantum cascade lasers with >1 W output powers
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Terahertz quantum cascade lasers with >1 W output powers

Li, Lianhe ; Chen, Li ; Zhu, Jingxuan ; Freeman, J ; Dean, P ; Valavanis, A ; Davies, A.G ; Linfield, E.H

Electronics letters, 2014-02, Vol.50 (4), p.309-311 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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6
Application of graphene oxide for reduction of thermal resistance of high-power laser diodes
Application of graphene oxide for reduction of thermal resistance of high-power laser diodes
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Application of graphene oxide for reduction of thermal resistance of high-power laser diodes

Da˛browska, E ; Teodorczyk, M ; Lipińska, L ; Koziński, R ; Mala˛g, A

Electronics letters, 2013-11, Vol.49 (24), p.1550-1551 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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7
Phase Instability and Amplitude Instability of Quantum-Cascade Lasers With Fabry-Perot Cavity
Phase Instability and Amplitude Instability of Quantum-Cascade Lasers With Fabry-Perot Cavity
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Phase Instability and Amplitude Instability of Quantum-Cascade Lasers With Fabry-Perot Cavity

Bai, Jing

IEEE transactions on nanotechnology, 2012-03, Vol.11 (2), p.292-297 [Periódico revisado por pares]

New York, NY: IEEE

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8
Effect of Substrate Removal on the Optoelectronic Properties of GaAs Epitaxial Layers and GaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers
Effect of Substrate Removal on the Optoelectronic Properties of GaAs Epitaxial Layers and GaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers
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Effect of Substrate Removal on the Optoelectronic Properties of GaAs Epitaxial Layers and GaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers

Hiruma, K ; Kinoshita, M ; Mikawa, T

IEEE transactions on components, packaging, and manufacturing technology (2011), 2011-03, Vol.1 (3), p.420-427 [Periódico revisado por pares]

Piscataway, NJ: IEEE

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9
Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers
Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers
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Dynamical Hysteresis and Thermal Effects in Vertical-Cavity Surface-Emitting Lasers

Torre, M S ; Masoller, C

IEEE journal of quantum electronics, 2010-12, Vol.46 (12), p.1788-1794 [Periódico revisado por pares]

New York, NY: IEEE

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10
Characteristics of Edge-Emitting Bragg Reflection Waveguide Lasers
Characteristics of Edge-Emitting Bragg Reflection Waveguide Lasers
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Characteristics of Edge-Emitting Bragg Reflection Waveguide Lasers

Cunzhu Tong ; Bijlani, B J ; Alali, S ; Helmy, A S

IEEE journal of quantum electronics, 2010-11, Vol.46 (11), p.1605-1610 [Periódico revisado por pares]

New York, NY: IEEE

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