Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Paula Ghedini Der Agopian João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)
Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08
Pennington The Electrochemical Society 2005
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Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)
Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08
Pennington The Electrochemical Society 2005
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An improved model for the triangular SOI misalignment test structure
Renato Camargo Giacomini João Antonio Martino 1959-; Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)
Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004
Pennington The Electrochemical Society 2004
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Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
Marcelo Antonio Pavanello Antonio Cerdeira; João Antonio Martino 1959-; Miguel A Alemán; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)
Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08
Pennington The Electrochemical Society 2005
Item não circula. Consulte sua biblioteca.(Acessar)
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Milene Galeti Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)
Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002
Pennington The Electrochemical Society 2002
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Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)
Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002
Pennington The Electrochemical Society 2002
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Analysis of the capacitance vs. voltage in graded channel SOI capacitor
Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2003 (18 2003 São Paulo, SP)
Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003
Pennington Electrochemical Society 2003
Item não circula. Consulte sua biblioteca.(Acessar)