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Resultados de 11 a 20 de 149  para Produção Intelectual da USP

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11
Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Analysis of the linear kink effect in partially depleted SOI nMOSFETs
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Artigo de Congresso 		Adicionar ao Meu Espaço

Analysis of the linear kink effect in partially depleted SOI nMOSFETs

Paula Ghedini Der Agopian João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

12
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

13
An improved model for the triangular SOI misalignment test structure
An improved model for the triangular SOI misalignment test structure
Material Type:
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An improved model for the triangular SOI misalignment test structure

Renato Camargo Giacomini João Antonio Martino 1959-; Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. B.; Ribas, R. P.; Swart, J. eds Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

14
SOI technology characterization using SOI-MOS capacitor
SOI technology characterization using SOI-MOS capacitor
Material Type:
Artigo 		Adicionar ao Meu Espaço

SOI technology characterization using SOI-MOS capacitor

Victor Sonnenberg João Antonio Martino 1959-

Solid-State Electronics London: Pergamon Press, 2005

London 2005

Item não circula. Consulte sua biblioteca.(Acessar)

15
SOI technology characterization using SOI-MOS capacitor
SOI technology characterization using SOI-MOS capacitor
Material Type:
Artigo 		Adicionar ao Meu Espaço

SOI technology characterization using SOI-MOS capacitor

Victor Sonnenberg João Antonio Martino 1959-

Solid-State Electronics London: Pergamon Press, 2005

London 2005

Item não circula. Consulte sua biblioteca.(Acessar)

16
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Symposium Silicon-on-Insulator Technology and Devices (3d 1997 Paris, France)

Cristoloveanu, S et al Proceedings 3. Symposium on Silicon-on-Insulator Technology and Devices Pennington: The Electrochemical Society, 1997

Pennington The Electrochemical Society 1997

Item não circula. Consulte sua biblioteca.(Acessar)

17
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments

Marcelo Antonio Pavanello Antonio Cerdeira; João Antonio Martino 1959-; Miguel A Alemán; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

18
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Material Type:
Livro 		Adicionar ao Meu Espaço

Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures

Milene Galeti Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

19
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
Material Type:
Livro 		Adicionar ao Meu Espaço

Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor

Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

20
Analysis of the capacitance vs. voltage in graded channel SOI capacitor
Analysis of the capacitance vs. voltage in graded channel SOI capacitor
Material Type:
Livro 		Adicionar ao Meu Espaço

Analysis of the capacitance vs. voltage in graded channel SOI capacitor

Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2003 (18 2003 São Paulo, SP)

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

Resultados de 11 a 20 de 149  para Produção Intelectual da USP

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