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Resultados de 1 a 10 de 13  para Produção Intelectual da USP

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1
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
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Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

2
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
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Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments

Marcelo Antonio Pavanello Antonio Cerdeira; João Antonio Martino 1959-; Miguel A Alemán; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

3
Analog performance of graded-channel SOI NMOSFETS at low temperatures
Analog performance of graded-channel SOI NMOSFETS at low temperatures
Material Type:
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Analog performance of graded-channel SOI NMOSFETS at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

4
A physically-based continuous model for graded-channel SOI MOSFET
A physically-based continuous model for graded-channel SOI MOSFET
Material Type:
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A physically-based continuous model for graded-channel SOI MOSFET

Marcelo Antonio Pavanello Benjamin Iniguez; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

5
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

6
Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
Material Type:
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Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures

Marcelo Antonio Pavanello Antonio Cerdeira; João Antonio Martino 1959-; Miguel A Alemán; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. P.; Ribas, R. P.; Swart, J. eds Microelectronic technology and devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

7
Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
Material Type:
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Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures

Carolina Davanzzo Gomes dos Santos Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; Jean-Pierre Raskin; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto de Galinhas)

Santos, E. J. P.; Ribas, R. P.; Swart, J. eds Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03 Pennington : The Electrochemical Society, 2004.

Pennington The Electrochemical Society 2004

Item não circula. Consulte sua biblioteca.(Acessar)

8
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Material Type:
Livro 		Adicionar ao Meu Espaço

Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications

Marcelo Antonio Pavanello Antonio Cerdeira; Miguel A Alemán; João Antonio Martino 1959-; Laurent Vancaillie; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

9
Impact of the graded-channel architecture on double gate transistors for high-performance analog applications
Impact of the graded-channel architecture on double gate transistors for high-performance analog applications
Material Type:
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Impact of the graded-channel architecture on double gate transistors for high-performance analog applications

Marcelo Antonio Pavanello João Antonio Martino 1959-; Tae Mo Chung; A Kranti; Jean-Pierre Raskin; Denis Flandre; International Symposium on SOI Technology and Devices (11 2003)

Cristoloveanu, S. et al. Silicon-on-Insulator Technology and Devices XI: proceedings Pennington: Electrochemical Society, 2003

Pennington The Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

10
The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics
The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

The graded-channel SOI MOSFET to alleviate the parasitic bipolar effects and improve the output characteristics

Marcelo Antonio Pavanello João Antonio Martino 1959-; Vincent Dessard; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (9. 1999 Washington)

Electrochemical Society Proceedings Pennington v. 99-3, p. 293-298, 1999

Pennington 1999

Item não circula. Consulte sua biblioteca.(Acessar)

Resultados de 1 a 10 de 13  para Produção Intelectual da USP

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