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1
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs

Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

2
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Material Type:
Livro 		Adicionar ao Meu Espaço

Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures

Milene Galeti Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

3
Analysis on CG SOI MOSFET analog parameters at high temperatures
Analysis on CG SOI MOSFET analog parameters at high temperatures
Material Type:
Livro 		Adicionar ao Meu Espaço

Analysis on CG SOI MOSFET analog parameters at high temperatures

Milene Galeti Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (18 2003 São Paulo, SP)

Martino J.A. ed ; Pavanello, M.A. ed ; Morimoto, N.I. ed Microelectronic Technology and Devices SBMicro 2003 Pennington : Electrochemical Society, 2003

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

4
Analysis of the self-heating effect in UTBOX devices
Analysis of the self-heating effect in UTBOX devices
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Analysis of the self-heating effect in UTBOX devices

Michele Rodrigues E. O Cruz; Milene Galeti; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices (27th 2012 Brasilia)

Microelectronics technology and devices, SBMicro Pennington: Electrochemical Society, 2012

Pennington 2012

Item não circula. Consulte sua biblioteca.(Acessar)

5
UTBOX SOI devices with high-k gate dielectric under analog performance
UTBOX SOI devices with high-k gate dielectric under analog performance
Material Type:
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UTBOX SOI devices with high-k gate dielectric under analog performance

Milene Galeti Michele Rodrigues; Marc Aoulaiche; Nadine Collaert; Eddy Simoen; Cor Claeys; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices (27th 2012 Brasilia)

Microelectronics technology and devices, SBMicro Pennington: Electrochemical Society, 2012

Pennington 2012

Item não circula. Consulte sua biblioteca.(Acessar)

6
Analog performance of SOI nFinFETs with different TiN gate electrode thickness
Analog performance of SOI nFinFETs with different TiN gate electrode thickness
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analog performance of SOI nFinFETs with different TiN gate electrode thickness

Milene Galeti Michele Rodrigues; Nadine Collaert; Eddy Simoen; Cor Claeys; João Antonio Martino 1959-

Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 59-65, 2010

New Jersey 2010

Item não circula. Consulte sua biblioteca.(Acessar)

7
Analog performance of SOI nFinFETs with different TiN gate electrode thickness
Analog performance of SOI nFinFETs with different TiN gate electrode thickness
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analog performance of SOI nFinFETs with different TiN gate electrode thickness

Milene Galeti Michele Rodrigues; Nadine Collaert; Eddy Simoen; Cor Claeys; João Antonio Martino 1959-

Microelectronics Technology and Devices - SBMicro 2010 v.31, n.1, p. 59-65, 2010

New Jersey 2010

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Galeti, M
  3. Claeys, C
  4. Rodrigues, M
  5. Simoen, E

Neste Assunto:

  1. Microeletrônica
  2. Transistores

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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