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Refinado por: autor: Martino, J remover Nome da Publicação: Microelectronics Technology and Devices SBMICRO 2002 remover
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1
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
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Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

2
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
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Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures

Milene Galeti Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

3
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
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Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor

Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

4
A simple analytical model of graded-channel SOI nMOSFET transconductance
A simple analytical model of graded-channel SOI nMOSFET transconductance
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A simple analytical model of graded-channel SOI nMOSFET transconductance

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

5
Analog performance of graded-channel SOI NMOSFETS at low temperatures
Analog performance of graded-channel SOI NMOSFETS at low temperatures
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Analog performance of graded-channel SOI NMOSFETS at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

6
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K
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Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

7
A physically-based continuous model for graded-channel SOI MOSFET
A physically-based continuous model for graded-channel SOI MOSFET
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A physically-based continuous model for graded-channel SOI MOSFET

Marcelo Antonio Pavanello Benjamin Iniguez; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

8
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
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The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

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