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1
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Material Type:
Livro 		Adicionar ao Meu Espaço

Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

2
Microelectronics Technology and Devices SBMicro 2003
Microelectronics Technology and Devices SBMicro 2003
Material Type:
Livro 		Adicionar ao Meu Espaço

Microelectronics Technology and Devices SBMicro 2003

João Antonio Martino 1959- Marcelo Antonio Pavanello; Nilton Itiro Morimoto 1962-; International Symposium on Microelectronics Technology and Devices (18. 2003 São Paulo)

SBMicro proceedings

Pennington Electrochemical Society 2003

Item não circula. Consulte sua biblioteca.(Acessar)

3
Halo optimization for 0.13 micron SOI CMOS technology
Halo optimization for 0.13 micron SOI CMOS technology
Material Type:
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Halo optimization for 0.13 micron SOI CMOS technology

Paula Ghedini Der Agopian Julia Maria Arrabaça; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)

SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008

Pennington The Electrochemical Society 2008

Item não circula. Consulte sua biblioteca.(Acessar)

4
Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla.
Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla.
Material Type:
Dissertação de Mestrado 		Adicionar ao Meu Espaço

Influência da tensão mecânica (strain) no abaixamento de barreira induzido pelo dreno (DIBL) em FinFETs de porta tripla.

Santos, Sara Dereste Dos

Biblioteca Digital de Teses e Dissertações da USP; Universidade de São Paulo; Escola Politécnica 2010-02-05

Acesso online. A biblioteca também possui exemplares impressos.

5
A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
Material Type:
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A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region

Galba Falce de Almeida João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

6
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs

Marcello Bellodi João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

7
A simple method to model nonrectangular-gate layout in SOI MOSFETs
A simple method to model nonrectangular-gate layout in SOI MOSFETs
Material Type:
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A simple method to model nonrectangular-gate layout in SOI MOSFETs

Renato Camargo Giacomini João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

8
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET

A.G. Paiola Aparecido Sirley Nicolett; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

9
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs

Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

10
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
Material Type:
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Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range

Salvador Pinillos Gimenez Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

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