Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growthKuramata, Akito ; Koshi, Kimiyoshi ; Watanabe, Shinya ; Yamaoka, Yu ; Masui, Takekazu ; Yamakoshi, ShigenobuJapanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Basic study on estimation method of wall shear stress in common carotid artery using blood flow imagingNagaoka, Ryo ; Ishikawa, Kazuma ; Mozumi, Michiya ; Cinthio, Magnus ; Hasegawa, HideyukiJapanese Journal of Applied Physics, 2020-07, Vol.59 (SK), p.SKKE16 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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Germanium CMOS potential from material and process perspectives: Be more positive about germaniumToriumi, Akira ; Nishimura, TomonoriJapanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.10101 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Review on ferroelectric/polar metalsZhou, W. X. ; Ariando, A.Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SI0802 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth processUeda, Osamu ; Ikenaga, Noriaki ; Koshi, Kimiyoshi ; Iizuka, Kazuyuki ; Kuramata, Akito ; Hanada, Kenji ; Moribayashi, Tomoya ; Yamakoshi, Shigenobu ; Kasu, MakotoJapanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Physical reservoir computing-an introductory perspectiveNakajima, KoheiJapanese Journal of Applied Physics, 2020-06, Vol.59 (6), p.60501 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® techniqueKaneko, Kentaro ; Fujita, Shizuo ; Hitora, ToshimiJapanese Journal of Applied Physics, 2018-02, Vol.57 (2S2) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substratesAkaiwa, Kazuaki ; Kaneko, Kentaro ; Ichino, Kunio ; Fujita, ShizuoJapanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetectorPratiyush, Anamika Singh ; Krishnamoorthy, Sriram ; Kumar, Sandeep ; Xia, Zhanbo ; Muralidharan, Rangarajan ; Rajan, Siddharth ; Nath, Digbijoy N.Japanese Journal of Applied Physics, 2018-06, Vol.57 (6) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current polingHe, Chao ; Karaki, Tomoaki ; Yang, Xiaoming ; Yamashita, Yohachi (John) ; Sun, Yiqin ; Long, XifaJapanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SLLD06 [Periódico revisado por pares]Texto completo disponível |