Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitrideMackoit-Sinkevičienė, M. ; Maciaszek, M. ; Van de Walle, C. G. ; Alkauskas, A.Applied physics letters, 2019-11, Vol.115 (21) [Periódico revisado por pares]Texto completo disponível |
12 |
Material Type: Artigo
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Active materials by four-dimension printingGe, Qi ; Qi, H. Jerry ; Dunn, Martin L.Applied physics letters, 2013-09, Vol.103 (13), p.131901 [Periódico revisado por pares]Texto completo disponível |
13 |
Material Type: Artigo
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Substrate-induced strain and charge doping in CVD-grown monolayer MoS2Chae, Woo Hyun ; Cain, Jeffrey D. ; Hanson, Eve D. ; Murthy, Akshay A. ; Dravid, Vinayak P.Applied physics letters, 2017-10, Vol.111 (14) [Periódico revisado por pares]Texto completo disponível |
14 |
Material Type: Artigo
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Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructureCadiz, F. ; Robert, C. ; Courtade, E. ; Manca, M. ; Martinelli, L. ; Taniguchi, T. ; Watanabe, K. ; Amand, T. ; Rowe, A. C. H. ; Paget, D. ; Urbaszek, B. ; Marie, X.Applied physics letters, 2018-04, Vol.112 (15) [Periódico revisado por pares]Texto completo disponível |
15 |
Material Type: Artigo
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Atom insertion into grain boundaries and stress generation in physically vapor deposited filmsMagnfält, D. ; Abadias, G. ; Sarakinos, K.Applied physics letters, 2013-07, Vol.103 (5) [Periódico revisado por pares]Texto completo disponível |
16 |
Material Type: Artigo
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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristicsHigashiwaki, Masataka ; Sasaki, Kohei ; Kamimura, Takafumi ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2013-09, Vol.103 (12) [Periódico revisado por pares]Texto completo disponível |
17 |
Material Type: Artigo
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On-the-fly scans for X-ray ptychographyPelz, Philipp M. ; Guizar-Sicairos, Manuel ; Thibault, Pierre ; Johnson, Ian ; Holler, Mirko ; Menzel, AndreasApplied physics letters, 2014-12, Vol.105 (25) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
18 |
Material Type: Artigo
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substratesHigashiwaki, Masataka ; Sasaki, Kohei ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2012-01, Vol.100 (1) [Periódico revisado por pares]Texto completo disponível |
19 |
Material Type: Artigo
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Ferroelectricity in hafnium oxide thin filmsBöscke, T. S. ; Müller, J. ; Bräuhaus, D. ; Schröder, U. ; Böttger, U.Applied physics letters, 2011-09, Vol.99 (10), p.102903-102903-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
20 |
Material Type: Artigo
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An optically pumped 2.5 μm GeSn laser on Si operating at 110 KAl-Kabi, Sattar ; Ghetmiri, Seyed Amir ; Margetis, Joe ; Pham, Thach ; Zhou, Yiyin ; Dou, Wei ; Collier, Bria ; Quinde, Randy ; Du, Wei ; Mosleh, Aboozar ; Liu, Jifeng ; Sun, Greg ; Soref, Richard A. ; Tolle, John ; Li, Baohua ; Mortazavi, Mansour ; Naseem, Hameed A. ; Yu, Shui-QingApplied physics letters, 2016-10, Vol.109 (17) [Periódico revisado por pares]Texto completo disponível |