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Refinado por: Nome da Publicação: Semiconductors remover
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Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study
Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study
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Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study

Talla, Jamal A.

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.40-45 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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2
A DFT study of BeX (X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential
A DFT study of BeX (X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential
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A DFT study of BeX (X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential

Rai, D. P. ; Ghimire, M. P. ; Thapa, R. K.

Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1411-1422 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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3
Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys
Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys
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Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys

Skipetrov, E. P. ; Kovalev, B. B. ; Skipetrova, L. A. ; Knotko, A. V. ; Slynko, V. E.

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1419-1426 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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4
On the Galvanomagnetic Properties and Thermoelectric Power of Ultrathin Films of the Bismuth–Antimony System on a Mica Substrate
On the Galvanomagnetic Properties and Thermoelectric Power of Ultrathin Films of the Bismuth–Antimony System on a Mica Substrate
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On the Galvanomagnetic Properties and Thermoelectric Power of Ultrathin Films of the Bismuth–Antimony System on a Mica Substrate

Gerega, V. A. ; Suslov, A. V. ; Komarov, V. A. ; Grabov, V. M. ; Demidov, E. V. ; Kolobov, A. V.

Semiconductors (Woodbury, N.Y.), 2022-05, Vol.56 (5), p.310-316 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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5
Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption
Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption
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Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption

Timoshnev, S. N. ; Benemanskaya, G. V. ; Mizerov, A. M. ; Sobolev, M. S. ; Enns, Ya. B.

Semiconductors (Woodbury, N.Y.), 2023-11, Vol.57 (11), p.508-512 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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6
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys
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First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys

Singh, A. K. ; Chandra, Devesh ; Kattayat, Sandhya ; Kumar, Shalendra ; Alvi, P. A. ; Rathi, Amit

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (13), p.1731-1739 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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7
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
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Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Evstigneev, V. S. ; Varavin, V. S. ; Chilyasov, A. V. ; Remesnik, V. G. ; Moiseev, A. N. ; Stepanov, B. S.

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.702-707 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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8
Effect of Thermal History on the Properties of Efficient Thermoelectric Alloys Ge0.86Pb0.1Bi0.04Te
Effect of Thermal History on the Properties of Efficient Thermoelectric Alloys Ge0.86Pb0.1Bi0.04Te
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Effect of Thermal History on the Properties of Efficient Thermoelectric Alloys Ge0.86Pb0.1Bi0.04Te

Shabaldin, A. A. ; Samunin, A. Yu ; Konstantinov, P. P. ; Novikov, S. V. ; Burkov, A. T. ; Bu, Zhonglin ; Pei, Yanzhong

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.410-414 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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9
Rippling Effect on the Electrical Properties of Boron Nitride Monolayer: Density Functional Theory
Rippling Effect on the Electrical Properties of Boron Nitride Monolayer: Density Functional Theory
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Rippling Effect on the Electrical Properties of Boron Nitride Monolayer: Density Functional Theory

Talla, J. A. ; Almahmoud, E. A. ; Abu-Farsakh, H.

Semiconductors (Woodbury, N.Y.), 2021-08, Vol.55 (8), p.696-703 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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10
First-principles calculations of the electronic and structural properties of GaSb
First-principles calculations of the electronic and structural properties of GaSb
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First-principles calculations of the electronic and structural properties of GaSb

Castaño-González, E.-E. ; Seña, N. ; Mendoza-Estrada, V. ; González-Hernández, R. ; Dussan, A. ; Mesa, F.

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1280-1286 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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