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Threshold voltage shift of amorphous silicon thin-film transistors during pulse operationORITSUKI, R ; HORII, T ; SASANO, A ; TSUTSUI, K ; KOIZUMI, T ; KANEKO, Y ; TSUKADA, TJapanese Journal of Applied Physics, 1991-12, Vol.30 (12B), p.3719-3723 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |