Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS DevicesTanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, Mitiko ; Liu, Y ; Green, KIEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2072-2080 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Ata de Congresso
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Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance predictionTanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, M ; Liu, Y ; Green, K2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.243-246IEEETexto completo disponível |
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Material Type: Artigo
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HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET CircuitsOritsuki, Y ; Yokomichi, M ; Kajiwara, T ; Tanaka, A ; Sadachika, N ; Miyake, M ; Kikuchihara, H ; Johguchi, K ; Feldmann, U ; Mattausch, H J ; Miura-Mattausch, MIEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2671-2678 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Ata de Congresso
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HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuitsMattausch, H.J. ; Kajiwara, T. ; Yokomichi, M. ; Sakuda, T. ; Oritsuki, Y. ; Miyake, M. ; Sadachika, N. ; Kikuchihara, H. ; Feldmann, U. ; Miura-Mattausch, M.2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.276-279IEEETexto completo disponível |
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Material Type: Capítulo de Livro
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HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model for High-Voltage MOSFETsMattausch, H. J. ; Sadachika, N. ; Yokomichi, M. ; Miyake, M. ; Kajiwara, T. ; Oritsuki, Y. ; Sakuda, T. ; Kikuchihara, H. ; Feldmann, U. ; Miura-Mattausch, M.POWER/HVMOS Devices Compact Modeling, 2010, p.33-64Dordrecht: Springer NetherlandsSem texto completo |