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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices
Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices
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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

Tanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, Mitiko ; Liu, Y ; Green, K

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2072-2080 [Periódico revisado por pares]

New York, NY: IEEE

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Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction
Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction
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Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction

Tanaka, A ; Oritsuki, Y ; Kikuchihara, H ; Miyake, M ; Mattausch, H J ; Miura-Mattausch, M ; Liu, Y ; Green, K

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.243-246

IEEE

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HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits
HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits
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HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

Oritsuki, Y ; Yokomichi, M ; Kajiwara, T ; Tanaka, A ; Sadachika, N ; Miyake, M ; Kikuchihara, H ; Johguchi, K ; Feldmann, U ; Mattausch, H J ; Miura-Mattausch, M

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2671-2678 [Periódico revisado por pares]

New York, NY: IEEE

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