Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Band structure of holes in p-type delta -doping quantum wells and superlatticesSipahi, GM ; Enderlein, R ; Scolfaro, LM ; Leite, JRPhysical review. B, Condensed matter, 1996-04, Vol.53 (15), p.9930-9942United StatesTexto completo disponível |
2 |
Material Type: Artigo
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p -type δ -doping quantum wells and superlattices in Si: Self-consistent hole potentials and band structuresRosa, A. L. ; Scolfaro, L. M. R. ; Enderlein, R. ; Sipahi, G. M. ; Leite, J. R.Physical review. B, Condensed matter, 1998-12, Vol.58 (23), p.15675-15687Sem texto completo |
3 |
Material Type: Artigo
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Band-edge modifications due to photogenerated carriers in single p -type δ-doped GaAs layersLevine, A. ; da Silva, E. C. F. ; Sipahi, G. M. ; Quivy, A. A. ; Scolfaro, L. M. R. ; Leite, J. R. ; Dias, I. F. L. ; Lauretto, E. ; de Oliveira, J. B. B. ; Meneses, E. A. ; Oliveira, A. G.Physical review. B, Condensed matter, 1999-02, Vol.59 (7), p.4634-4637Sem texto completo |