skip to main content
Idioma:
Primo Advanced Search
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search Query Term
Primo Advanced Search prefilters
Busca Simples
Resultados 1 2 3 4 5 next page
Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Semiconductor Devices remover Science & Technology remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
Material Type:
Artigo 		Adicionar ao Meu Espaço

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Yamada, Takahiro ; Ito, Joyo ; Asahara, Ryohei ; Watanabe, Kenta ; Nozaki, Mikito ; Hosoi, Takuji ; Shimura, Takayoshi ; Watanabe, Heiji

Applied physics letters, 2017-06, Vol.110 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
2
Extraordinary magnetoresistance in encapsulated monolayer graphene devices
Extraordinary magnetoresistance in encapsulated monolayer graphene devices
Material Type:
Artigo 		Adicionar ao Meu Espaço

Extraordinary magnetoresistance in encapsulated monolayer graphene devices

Zhou, Bowen ; Watanabe, K. ; Taniguchi, T. ; Henriksen, E. A.

Applied physics letters, 2020-02, Vol.116 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
3
Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator
Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator
Material Type:
Artigo 		Adicionar ao Meu Espaço

Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator

Watanabe, Ryota ; Yoshimi, Ryutaro ; Takahashi, Kei S. ; Tsukazaki, Atsushi ; Kawasaki, Masashi ; Kawamura, Minoru ; Tokura, Yoshinori

Applied physics letters, 2023-10, Vol.123 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
4
Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
Material Type:
Artigo 		Adicionar ao Meu Espaço

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Wada, Yuhei ; Mizobata, Hidetoshi ; Nozaki, Mikito ; Kobayashi, Takuma ; Hosoi, Takuji ; Kachi, Tetsu ; Shimura, Takayoshi ; Watanabe, Heiji

Applied physics letters, 2022-02, Vol.120 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
5
Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films
Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films
Material Type:
Artigo 		Adicionar ao Meu Espaço

Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films

Sutar, Surajit ; Agnihotri, Pratik ; Comfort, Everett ; Taniguchi, T. ; Watanabe, K. ; Ung Lee, Ji

Applied physics letters, 2014-03, Vol.104 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
6
Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
Material Type:
Artigo 		Adicionar ao Meu Espaço

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Freedsman, J. J. ; Watanabe, A. ; Urayama, Y. ; Egawa, T.

Applied physics letters, 2015-09, Vol.107 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
7
Electronic transport in graphene-based heterostructures
Electronic transport in graphene-based heterostructures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electronic transport in graphene-based heterostructures

Tan, J. Y. ; Avsar, A. ; Balakrishnan, J. ; Koon, G. K. W. ; Taychatanapat, T. ; O'Farrell, E. C. T. ; Watanabe, K. ; Taniguchi, T. ; Eda, G. ; Castro Neto, A. H. ; Özyilmaz, B.

Applied physics letters, 2014-05, Vol.104 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
8
Enhancement of anomalous Hall effect in epitaxial thin films of intrinsic magnetic topological insulator MnBi2Te4 with Fermi-level tuning
Enhancement of anomalous Hall effect in epitaxial thin films of intrinsic magnetic topological insulator MnBi2Te4 with Fermi-level tuning
Material Type:
Artigo 		Adicionar ao Meu Espaço

Enhancement of anomalous Hall effect in epitaxial thin films of intrinsic magnetic topological insulator MnBi2Te4 with Fermi-level tuning

Watanabe, Ryota ; Yoshimi, Ryutaro ; Kawamura, Minoru ; Kaneko, Yoshio ; Takahashi, Kei S. ; Tsukazaki, Atsushi ; Kawasaki, Masashi ; Tokura, Yoshinori

Applied physics letters, 2022-01, Vol.120 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
9
Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy
Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

Hosoi, Takuji ; Suzuki, Yuichiro ; Shimura, Takayoshi ; Watanabe, Heiji

Applied physics letters, 2014-10, Vol.105 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
10
Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface
Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface

Takeyama, Kei ; Moriya, Rai ; Watanabe, Kenji ; Masubuchi, Satoru ; Taniguchi, Takashi ; Machida, Tomoki

Applied physics letters, 2020-10, Vol.117 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
Resultados 1 2 3 4 5 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar
  1. Antes de1987  (6)
  2. 1987Até2009  (4)
  3. 2010Até2013  (6)
  4. 2014Até2018  (77)
  5. Após 2018  (139)
  6. Mais opções open sub menu

Nome da Publicação 

  1. Appl. Phys. Lett.;  (6)
  2. Appl. Phys. Lett  (1)
  3. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.