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Be/Al-based multilayer mirrors with improved reflection and spectral selectivity for solar astronomy above 17 nm wavelength
Be/Al-based multilayer mirrors with improved reflection and spectral selectivity for solar astronomy above 17 nm wavelength
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Be/Al-based multilayer mirrors with improved reflection and spectral selectivity for solar astronomy above 17 nm wavelength

Chkhalo, N.I. ; Pariev, D.E. ; Polkovnikov, V.N. ; Salashchenko, N.N. ; Shaposhnikov, R.A. ; Stroulea, I.L. ; Svechnikov, M.V. ; Vainer, Yu.A. ; Zuev, S.Yu

Thin solid films, 2017-06, Vol.631, p.106-111 [Periódico revisado por pares]

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2
X-ray scattering by the fused silica surface etched by low-energy Ar ions
X-ray scattering by the fused silica surface etched by low-energy Ar ions
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X-ray scattering by the fused silica surface etched by low-energy Ar ions

Barysheva, M M ; Chkhalo, N I ; Drozdov, M N ; Mikhailenko, M S ; Pestov, A E ; Salashchenko, N N ; Vainer, Y A ; Yunin, P A ; Zorina, M V

Journal of X-ray science and technology, 2019-01, Vol.27 (5), p.857-870 [Periódico revisado por pares]

Netherlands

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3
Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuits
Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuits
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Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuits

Vainer, B.G

Journal of crystal growth, 2000-03, Vol.210 (1), p.356-360 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding
Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding
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Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bonding

Vainer, B.G ; Kamaev, G.N ; Kurishev, G.L

Journal of crystal growth, 2000-03, Vol.210 (1), p.351-355 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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