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Refinado por: Base de dados/Biblioteca: Aluminium Industry Abstracts remover assunto: Silicon remover Applied Physics Letters remover
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1
Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80
Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80
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Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80

Mehnke Frank ; Wernicke, Tim ; Pingel Harald ; Kuhn, Christian ; Reich, Christoph ; Kueller Viola ; Knauer Arne ; Lapeyrade Mickael ; Weyers, Markus

Applied physics letters, 2013-11, Vol.103 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
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Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Schöche, S. ; Kühne, P. ; Hofmann, T. ; Schubert, M. ; Nilsson, D. ; Kakanakova-Georgieva, A. ; Janzén, E. ; Darakchieva, V.

Applied physics letters, 2013-11, Vol.103 (21), p.212107 [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
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Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

Heo, Junseok ; Zhou, Zifan ; Guo, Wei ; Ooi, Boon S ; Bhattacharya, Pallab

Applied physics letters, 2013-10, Vol.103 (18) [Periódico revisado por pares]

United States

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4
Correlation of the structural properties of a Pt seed layer with the perpendicular magnetic anisotropy features of full Heusler-based Co2FeAl/MgO/Co2Fe6B2 junctions via a 12-inch scale Si wafer process
Correlation of the structural properties of a Pt seed layer with the perpendicular magnetic anisotropy features of full Heusler-based Co2FeAl/MgO/Co2Fe6B2 junctions via a 12-inch scale Si wafer process
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Correlation of the structural properties of a Pt seed layer with the perpendicular magnetic anisotropy features of full Heusler-based Co2FeAl/MgO/Co2Fe6B2 junctions via a 12-inch scale Si wafer process

Chae, Kyo-Suk ; Lee, Du-Yeong ; Shim, Tae-Hun ; Hong, Jin-Pyo ; Park, Jea-Gun

Applied physics letters, 2013-10, Vol.103 (16) [Periódico revisado por pares]

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5
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
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Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Afroz Faria, Faiza ; Guo, Jia ; Zhao, Pei ; Li, Guowang ; Kumar Kandaswamy, Prem ; Wistey, Mark ; (Grace) Xing, Huili ; Jena, Debdeep

Applied physics letters, 2012-07, Vol.101 (3) [Periódico revisado por pares]

United States

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6
Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films
Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films
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Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

Schneider, M. ; Bittner, A. ; Patocka, F. ; Stöger-Pollach, M. ; Halwax, E. ; Schmid, U.

Applied physics letters, 2012-11, Vol.101 (22) [Periódico revisado por pares]

United States

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7
Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices
Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices
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Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices

Kornblum, Lior ; Meyler, Boris ; Cytermann, Catherine ; Yofis, Svetlana ; Salzman, Joseph ; Eizenberg, Moshe

Applied physics letters, 2012-02, Vol.100 (6) [Periódico revisado por pares]

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8
Simultaneous iron gettering and passivation of p-type monocrystalline silicon using a negatively charged aluminum-doped dielectric
Simultaneous iron gettering and passivation of p-type monocrystalline silicon using a negatively charged aluminum-doped dielectric
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Simultaneous iron gettering and passivation of p-type monocrystalline silicon using a negatively charged aluminum-doped dielectric

Das, Arnab ; Rohatgi, Ajeet

Applied physics letters, 2012-12, Vol.101 (25) [Periódico revisado por pares]

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9
The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process
The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process
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The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process

Woo Jeong, Shin ; Back Lee, Gi ; Ha, Hyeon-Jun ; Kwon, Soon-Ki ; Kim, Yun-Hi ; Kwon Ju, Byeong

Applied physics letters, 2012-12, Vol.101 (24) [Periódico revisado por pares]

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10
Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon
Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon
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Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon

Hwang, J. D. ; Luo, L. C. ; Hsueh, T. J. ; Hwang, S. B.

Applied physics letters, 2012-10, Vol.101 (15) [Periódico revisado por pares]

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