Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic RectifiersLi, Dong ; Chen, Mingyuan ; Zong, Qijun ; Zhang, ZengxingNano letters, 2017-10, Vol.17 (10), p.6353-6359 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
12 |
Material Type: Artigo
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Insulating interlocked ferroelectric and structural antiphase domain walls in multiferroic YMnO3Choi, T ; Horibe, Y ; Yi, H T ; Choi, Y J ; Wu, Weida ; Cheong, S-WNature materials, 2010-03, Vol.9 (3), p.253-258 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
13 |
Material Type: Artigo
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Nucleic acid memoryZhirnov, Victor ; Zadegan, Reza M ; Sandhu, Gurtej S ; Church, George M ; Hughes, William LNature materials, 2016-04, Vol.15 (4), p.366-370 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
14 |
Material Type: Artigo
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Anatomy of Ag/Hafnia‐Based Selectors with 1010 NonlinearityMidya, Rivu ; Wang, Zhongrui ; Zhang, Jiaming ; Savel'ev, Sergey E. ; Li, Can ; Rao, Mingyi ; Jang, Moon Hyung ; Joshi, Saumil ; Jiang, Hao ; Lin, Peng ; Norris, Kate ; Ge, Ning ; Wu, Qing ; Barnell, Mark ; Li, Zhiyong ; Xin, Huolin L. ; Williams, R. Stanley ; Xia, Qiangfei ; Yang, J. JoshuaAdvanced materials (Weinheim), 2017-03, Vol.29 (12), p.n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |
15 |
Material Type: Artigo
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Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor MemoryLiu, Xiwen ; Wang, Dixiong ; Kim, Kwan-Ho ; Katti, Keshava ; Zheng, Jeffrey ; Musavigharavi, Pariasadat ; Miao, Jinshui ; Stach, Eric A ; Olsson, Roy H ; Jariwala, DeepNano letters, 2021-05, Vol.21 (9), p.3753-3761 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
16 |
Material Type: Artigo
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Resistive Switches and Memories from Silicon OxideYao, Jun ; Sun, Zhengzong ; Zhong, Lin ; Natelson, Douglas ; Tour, James M.Nano letters, 2010-10, Vol.10 (10), p.4105-4110 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
17 |
Material Type: Artigo
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Organic–Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial SynapsesChoi, Jaeho ; Han, Ji Su ; Hong, Kootak ; Kim, Soo Young ; Jang, Ho WonAdvanced materials (Weinheim), 2018-10, Vol.30 (42), p.e1704002-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
18 |
Material Type: Artigo
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Multifunctional Optoelectronic Synapse Based on Ferroelectric Van der Waals Heterostructure for Emulating the Entire Human Visual SystemGuo, Feng ; Song, Menglin ; Wong, Man‐Chung ; Ding, Ran ; Io, Weng Fu ; Pang, Sin‐Yi ; Jie, Wenjing ; Hao, JianhuaAdvanced functional materials, 2022-02, Vol.32 (6), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
19 |
Material Type: Artigo
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Local Light-Induced Magnetization Using Nanodots and Chiral MoleculesBen Dor, Oren ; Morali, Noam ; Yochelis, Shira ; Baczewski, Lech Tomasz ; Paltiel, YossiNano letters, 2014-11, Vol.14 (11), p.6042-6049 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
20 |
Material Type: Artigo
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Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information StorageCheng, Xue‐Feng ; Qian, Wen‐Hu ; Wang, Jia ; Yu, Chuang ; He, Jing‐Hui ; Li, Hua ; Xu, Qing‐Feng ; Chen, Dong‐Yun ; Li, Na‐Jun ; Lu, Jian‐MeiSmall (Weinheim an der Bergstrasse, Germany), 2019-12, Vol.15 (49), p.e1905731-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |