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Material Type: Artigo
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Resistive Switches and Memories from Silicon OxideYao, Jun ; Sun, Zhengzong ; Zhong, Lin ; Natelson, Douglas ; Tour, James M.Nano letters, 2010-10, Vol.10 (10), p.4105-4110 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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Material Type: Artigo
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Local Light-Induced Magnetization Using Nanodots and Chiral MoleculesBen Dor, Oren ; Morali, Noam ; Yochelis, Shira ; Baczewski, Lech Tomasz ; Paltiel, YossiNano letters, 2014-11, Vol.14 (11), p.6042-6049 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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Material Type: Artigo
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Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical MemoriesWu, Wenzhuo ; Wang, Zhong LinNano letters, 2011-07, Vol.11 (7), p.2779-2785 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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Material Type: Artigo
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Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data StorageSong, Jinhui ; Zhang, Yan ; Xu, Chen ; Wu, Wenzuo ; Wang, Zhong LinNano letters, 2011-07, Vol.11 (7), p.2829-2834 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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Material Type: Artigo
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Study of the switching phenomena of TlGaS2 single crystalsAl Ghamdi, A.A. ; Nagat, A.T. ; Bahabri, F.S. ; Al Orainy, R.H. ; Al Garni, S.E.Applied surface science, 2011-02, Vol.257 (8), p.3205-3210 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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Flexible organic transistors on standard printing paper and memory properties induced by floated gate electrodePeng, Boyu ; Chan, Paddy K.L.Organic electronics, 2014-01, Vol.15 (1), p.203-210 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memoryLiu, Chih-Yi ; Huang, Jyun-Jie ; Lai, Chun-HungThin solid films, 2013-02, Vol.529, p.107-110 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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Material Type: Artigo
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A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device CharacteristicsChen, AnIEEE transactions on electron devices, 2013-04, Vol.60 (4), p.1318-1326 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Nanoscale Reversible Mass Transport for Archival MemoryBegtrup, G. E ; Gannett, W ; Yuzvinsky, T. D ; Crespi, V. H ; Zettl, ANano letters, 2009-05, Vol.9 (5), p.1835-1838 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
10 |
Material Type: Artigo
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Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transitionFORS, Rickard ; KHARTSEV, Sergey I ; GRISHIN, Alexander MPhysical review. B, Condensed matter and materials physics, 2005-01, Vol.71 (4), p.045305.1-045305.10, Article 045305 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |