Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity AnalysisNarang, R. ; Reddy, K. V. S. ; Saxena, M. ; Gupta, R. S. ; Gupta, M.IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2809-2817 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
12 |
Material Type: Artigo
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High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma PostoxidationRUI ZHANG ; HUANG, Po-Chin ; LIN, Ju-Chin ; TAOKA, Noriyuki ; TAKENAKA, Mitsuru ; TAKAGI, ShinichiIEEE transactions on electron devices, 2013-03, Vol.60 (3), p.927-934 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
13 |
Material Type: Artigo
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Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM DevicesWALCZYK, Christian ; WALCZYK, Damian ; WENGER, Christian ; SCHROEDER, Thomas ; BERTAUD, Thomas ; SOWINSKA, Malgorzata ; LUKOSIUS, Mindaugas ; FRASCHKE, Mirko ; WOLANSKY, Dirk ; TILLACK, Bernd ; MIRANDA, EnriqueIEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3124-3131 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
14 |
Material Type: Artigo
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Theory of the Junctionless Nanowire FETGnani, E. ; Gnudi, A. ; Reggiani, S. ; Baccarani, G.IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2903-2910 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
15 |
Material Type: Artigo
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A Junctionless Nanowire Transistor With a Dual-Material GateHaijun Lou ; Lining Zhang ; Yunxi Zhu ; Xinnan Lin ; Shengqi Yang ; Jin He ; Mansun ChanIEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1829-1836 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
16 |
Material Type: Artigo
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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETsConzatti, F. ; Pala, M. G. ; Esseni, D. ; Bano, E. ; Selmi, L.IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2085-2092 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
17 |
Material Type: Artigo
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A Comparative Study of Different Physics-Based NBTI ModelsMahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A. E. ; Alam, M. A.IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
18 |
Material Type: Artigo
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Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETsUren, M. J. ; Moreke, J. ; Kuball, M.IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3327-3333 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
19 |
Material Type: Artigo
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Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and CharacterizationSivarama Krishna, Mulinti ; Das, S. ; Biswas, K. ; Goswami, B.IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4067-4073 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
20 |
Material Type: Artigo
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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETsKuo-Hsing Kao ; Verhulst, A. S. ; Vandenberghe, W. G. ; Soree, B. ; Groeseneken, G. ; De Meyer, K.IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |