Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Investigation and Modeling of Z-Interference in Poly-Si Channel-Based 3-D NAND Flash MemoriesJo, Hyungjun ; Ahn, Sangmin ; Shin, HyungcheolIEEE transactions on electron devices, 2022-02, Vol.69 (2), p.543-548 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Investigation of Gate-Length Scaling of Ferroelectric FETJindal, Sourabh ; Manhas, Sanjeev Kumar ; Gautam, Satendra Kumar ; Balatti, Simone ; Kumar, Arvind ; Pakala, MahendraIEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1364-1368 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on } Retention Loss in a Multilevel Charge Trap Flash MemoryLiu, Yu-Heng ; Zhan, Ting-Chien ; Wang, Tahui ; Tsai, Wen-Jer ; Lu, Tao-Cheng ; Chen, Kuang-Chao ; Lu, Chih-YuanIEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5155-5161 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Considerations for Ultimate CMOS ScalingKuhn, K. J.IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1813-1828 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity ModulationUemoto, Y. ; Hikita, M. ; Ueno, H. ; Matsuo, H. ; Ishida, H. ; Yanagihara, M. ; Ueda, T. ; Tanaka, T. ; Ueda, D.IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICsChuan Xu ; Hong Li ; Suaya, R ; Banerjee, KIEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3405-3417 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: ModelingLarentis, Stefano ; Nardi, Federico ; Balatti, Simone ; Gilmer, David C. ; Ielmini, DanieleIEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2468-2475 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide TrapsGrasser, T. ; Kaczer, B. ; Goes, W. ; Reisinger, H. ; Aichinger, T. ; Hehenberger, P. ; Wagner, P. ; Schanovsky, F. ; Franco, J. ; Luque, María Toledano ; Nelhiebel, M.IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3652-3666 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Bio-Inspired Stochastic Computing Using Binary CBRAM SynapsesSuri, M. ; Querlioz, D. ; Bichler, O. ; Palma, G. ; Vianello, E. ; Vuillaume, D. ; Gamrat, C. ; DeSalvo, B.IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2402-2409 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs-Part I: Model Description and Single Trap Analysis in Tunnel-FETsPala, Marco G. ; Esseni, DavidIEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2795-2801 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |