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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Semiconductor materials in analytical applications of surface-enhanced Raman scatteringJi, Wei ; Zhao, Bing ; Ozaki, YukihiroJournal of Raman spectroscopy, 2016-01, Vol.47 (1), p.51-58 [Periódico revisado por pares]Bognor Regis: Blackwell Publishing LtdTexto completo disponível |
| 2 |
Material Type: Artigo
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Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap SemiconductorsChettri, Dhanu ; Mainali, Ganesh ; Xiao, Na ; Tang, Xiao ; Li, Xiaohangphysica status solidi (b), 2024-07, Vol.261 (7), p.n/a [Periódico revisado por pares]Texto completo disponível |
| 3 |
Material Type: Artigo
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High-performance p-channel transistors with transparent Zn doped-CuILiu, Ao ; Zhu, Huihui ; Park, Won-Tae ; Kim, Se-Jun ; Kim, Hyungjun ; Kim, Myung-Gil ; Noh, Yong-YoungNature communications, 2020-08, Vol.11 (1), p.4309-4309, Article 4309 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 4 |
Material Type: Artigo
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Metal oxides for optoelectronic applicationsYu, Xinge ; Marks, Tobin J ; Facchetti, AntonioNature materials, 2016-04, Vol.15 (4), p.383-396 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 5 |
Material Type: Artigo
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Mixed Ionic and Electronic Conduction in Small-Molecule SemiconductorsKousseff, Christina J ; Halaksa, Roman ; Parr, Zachary S ; Nielsen, Christian BChemical reviews, 2022-02, Vol.122 (4), p.4397-4419 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
| 6 |
Material Type: Artigo
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Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctionsLiu, Yuan ; Guo, Jian ; Zhu, Enbo ; Liao, Lei ; Lee, Sung-Joon ; Ding, Mengning ; Shakir, Imran ; Gambin, Vincent ; Huang, Yu ; Duan, XiangfengNature (London), 2018-05, Vol.557 (7707), p.696-700 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 7 |
Material Type: Artigo
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Recent advances and trend of HEV/EV-oriented power semiconductors – an overviewLiu, Guoyou ; Li, Kongjing ; Wang, Yangang ; Luo, Haihui ; Luo, HaozeIET power electronics, 2020-02, Vol.13 (3), p.394-404 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
| 8 |
Material Type: Artigo
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Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron MobilitiesChen, Jiadi ; Zhang, Weifeng ; Wang, Liping ; Yu, GuiAdvanced materials (Weinheim), 2023-03, Vol.35 (11), p.e2210772-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
| 9 |
Material Type: Artigo
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Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap SemiconductorsXie, Chao ; Lu, Xing‐Tong ; Tong, Xiao‐Wei ; Zhang, Zhi‐Xiang ; Liang, Feng‐Xia ; Liang, Lin ; Luo, Lin‐Bao ; Wu, Yu‐ChengAdvanced functional materials, 2019-02, Vol.29 (9), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
| 10 |
Material Type: Livro
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Extended Defects in Semiconductors: Electronic Properties, Device Effects and StructuresHolt, D. B. ; Yacobi, B. G.Cambridge: Cambridge University Press 2007Sem texto completo |
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